Advanced ion implantation applications for leading edge transistor design

Gossmann, Hans‐Joachim L.; Erokhin, Yuri

doi:10.1109/icsict.2012.6467958

2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology 2012

DOI: 10.1109/icsict.2012.6467958

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Advanced ion implantation applications for leading edge transistor design

Hans‐Joachim L. Gossmann

Yuri Erokhin

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Advanced ion implantation applications for leading edge transistor design

Cited by 1 publication

References 18 publications

Advances in ion beam modification of semiconductors

Advances in ion beam modification of semiconductors

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