Advanced fault isolation technique using electro-optical terahertz pulse reflectometry

Tay, M. Y.; Cao, Lihong; Venkata, Manasa; Tran, Loc V.; Donna, Wallace; Qiu, Wentao; Alton, Jesse; Taday, Philip F.; Lin, M.S.

doi:10.1109/ipfa.2012.6306302

Cited by 13 publications

(7 citation statements)

References 4 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The higher contact angle yields a smaller drop diameter and therefore narrower lines. The effect of the surface treatment on drop diameter and height was investigated in [17].…”

Section: Cpw Structure Manufacturing and Measurement Methodologymentioning

confidence: 99%

Failure Mode Characterization in Inkjet-Printed CPW Lines Utilizing a High-Frequency Network Analyzer and Post-Processed TDR Analysis

Myllymäki¹,

Putaala²,

Hannu³

et al. 2013

PIER C

View full text Add to dashboard Cite

Abstract-Failure mode characterization was applied to coplanar transmission lines by utilizing 0.5-10-GHz S-parameter measurements and post-calculated TDR (Time-Domain-Reflectometry) analysis. Coplanar waveguide transmission lines were inkjet-printed on 1.0-mmthick flexible plastic RF substrates. Inductive, resistive, and capacitive types of failures -as the main failure modes caused by manufacturing, bending, or thermal cycling stresses -were investigated. The inkjetprinted CPW (Co-Planar Waveguide) lines were damaged by inductive shorts due to mechanical hitsor resistive and capacitive failures due to bending of the substrate. By using the TDR method the type and physical location of the failure can be determined.

show abstract

“…The higher contact angle yields a smaller drop diameter and therefore narrower lines. The effect of the surface treatment on drop diameter and height was investigated in [17].…”

Section: Cpw Structure Manufacturing and Measurement Methodologymentioning

confidence: 99%

Failure Mode Characterization in Inkjet-Printed CPW Lines Utilizing a High-Frequency Network Analyzer and Post-Processed TDR Analysis

Myllymäki¹,

Putaala²,

Hannu³

et al. 2013

PIER C

View full text Add to dashboard Cite

show abstract

“…As commercial TDR systems became more advanced, TDR became a standard IC packaging fault analysis tool [13,39,45]. Researchers have now demonstrated terahertzlevel TDR systems capable of locating faults in IC interconnects to nanometer-scale accuracies [11,37,50,52]. With such fine-grain resolution, TDR is an ideal tamper-analysis technique for ensuring the integrity of the guard wires used in T-TER ( §B).…”

Section: Ic Interconnect Modelsmentioning

confidence: 99%

“…number of impedance discontinuities, and/or 2) an increase in the guard wire's length. However, nanometer scale TDR [37,50] detects these changes ( §B).…”

Section: Guard Wire Bypass Attacksmentioning

confidence: 99%

T-TER: Defeating A2 Trojans with Targeted Tamper-Evident Routing

Trippel

Shin

Bush

et al. 2023

Proceedings of the ACM Asia Conference on Computer and Communications Security

View full text Add to dashboard Cite

Since the inception of the Integrated Circuit (IC), the size of the transistors used to construct them has continually shrunk. While this advancement significantly improves computing capability, fabrication costs have skyrocketed. As a result, most IC designers must now outsource fabrication. Outsourcing, however, presents a security threat: comprehensive post-fabrication inspection is infeasible given the size of modern ICs, so it is nearly impossible to know if the foundry has altered the original design during fabrication (i.e., inserted a hardware Trojan). Defending against a foundry-side adversary is challenging because-even with as few as two gateshardware Trojans can completely undermine software security. Researchers have attempted to both detect and prevent foundryside attacks, but all existing defenses are ineffective against additive Trojans with footprints of a few gates or less.We present Targeted Tamper-Evident Routing (T-TER), a layoutlevel defense against untrusted foundries, capable of thwarting the insertion of even the stealthiest hardware Trojans. T-TER is directed and routing-centric: it prevents foundry-side attackers from routing Trojan wires to, or directly adjacent to, security-critical wires by shielding them with guard wires. Unlike shield wires commonly deployed for cross-talk reduction, T-TER guard wires pose an additional technical challenge: they must be tamper-evident in both the digital (deletion attacks) and analog (move and jog attacks) domains. We address this challenge by developing a class of designed-in guard wires that are added to the design specifically to protect securitycritical wires. T-TER's guard wires incur minimal overhead, scale with design complexity, and provide tamper-evidence against attacks. We implement automated tools (on top of commercial CAD tools) for deploying guard wires around targeted nets within an open-source System-on-Chip. Lastly, using an existing IC threat assessment toolchain, we show T-TER defeats even the stealthiest known hardware Trojan, with ≈ 1% overhead. CCS CONCEPTS• Security and privacy → Tamper-proof and tamper-resistant designs; Malicious design modifications; • Hardware → Interconnect.

show abstract

“…147 This combination of packaging and circuitry NDT FA is a large improvement over destructive methods such as SEM or time-consuming requirements such as x-ray. EOTPR has been widely researched for NDT fault localization in chip inspection since 2010, in WLP, 148,149 2.5D, 150 3D packages, 145,[151][152][153] BGA connections, 154,155 C4 Bump Pads, 156 flip chip, 146 and TSV. 151 EOTPR is currently used commercially to detect interconnect quality with the full automation, rapid measurement speed, and high throughput for 2.5D, 3D, MEMS, and WLP.…”

Section: Electro-optical Terahertz Pulse Reflectometrymentioning

confidence: 99%

Review of THz-based semiconductor assurance

True

Jessurun

et al. 2021

Opt. Eng.

View full text Add to dashboard Cite

Terahertz radiation for inspection and fault detection has been of interest for the semiconductor industry since the first generation and detection of THz signals. Until recent hardware advances, THz systems lacked the signal quality and reliability for use as an effective nondestructive testing (NDT) method. Incremental advances in THz sources, detectors, and signal processing resulted in the successful applied-industrial use of THz NDT techniques on carbon fiber laminates, automotive coatings, and for detection of counterfeit pharmaceutical tablets. Semiconductor inspection and verification methods ensure the functionality and thereby safety of vital electronics for several critical industries. For this reason, the reliability and verification of a THz NDT method must exceed currently used inspection systems. With recent laboratory access to THz radiation, THz inspection methods are often compared with existing optical, electrical, and volumetric semiconductor verification techniques for their production monitoring and failure analysis viability. This review will cover THz techniques and their applications at the printed circuit board (PCB), integrated circuit (IC), and transistor/gate scales. The THz radiation gap spans between optical and electronic ranges with a millimeter-sized wavelength allowing for adequate penetration of plastic and ceramic and semiconductor materials. THz radiation can be used to determine structural features, electrical signatures in the THz range, and chemical information simultaneously. Cost and environmental limitations restricted the ability for THz NDT semiconductor inspection methods to escape the lab and succeed in the dynamic environment of a semiconductor fabrication environment. Hybridized metrology methods incorporating information from multiple inspection tools are a regime where THz spectral and structural data can be combined with existing methods such as optical, x-ray, or E-beam. THz can be used initially to offer support to the complex failure analysis and verification requirements of the semiconductor industry from nanoscale to macroscale features and components. For THz systems to become independent inspection tools used for semiconductor production monitoring, in the lab or fab, this will require a confident level of statistical process control for THz signal generation, detection, or processing. Applied industrial semiconductor device inspection will likely be a result of a combination of research into THz hardware, reconstruction techniques, and the widespread application of machine learning techniques. Many breakthroughs occurred over the years to enable successful nondestructive characterization and inspection of semiconductor devices from the nanoscale transistors to fully packaged integrated circuits and assembled PCBs.

show abstract

Advanced fault isolation technique using electro-optical terahertz pulse reflectometry

Cited by 13 publications

References 4 publications

Failure Mode Characterization in Inkjet-Printed CPW Lines Utilizing a High-Frequency Network Analyzer and Post-Processed TDR Analysis

Failure Mode Characterization in Inkjet-Printed CPW Lines Utilizing a High-Frequency Network Analyzer and Post-Processed TDR Analysis

T-TER: Defeating A2 Trojans with Targeted Tamper-Evident Routing

Review of THz-based semiconductor assurance

Contact Info

Product

Resources

About