1998
DOI: 10.1088/0960-1317/8/4/003
|View full text |Cite
|
Sign up to set email alerts
|

Advanced deep reactive ion etching: a versatile tool for microelectromechanical systems

Abstract: Advanced deep reactive ion etching (ADRIE) is a new tool for the fabrication of bulk micromachined devices. Different sensors and actuators which use ADRIE alone or combined with other technologies such as surface micromachining of silicon are presented here. These examples demonstrate the potential and the design freedom of this tool, allowing a large number of different shapes to be patterned and new smart devices to be realized.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
2
1

Citation Types

0
37
0

Year Published

2000
2000
2015
2015

Publication Types

Select...
3
3
2

Relationship

0
8

Authors

Journals

citations
Cited by 52 publications
(37 citation statements)
references
References 37 publications
(47 reference statements)
0
37
0
Order By: Relevance
“…To fulfill these requirements, DRIE process is developed. By exploiting the new opportunities provided by this powerful tool, many attractive MEMS devices have been fabricated [62][63][64][65][66][67][68][69][70].…”
Section: Dry Etchingmentioning
confidence: 99%
“…To fulfill these requirements, DRIE process is developed. By exploiting the new opportunities provided by this powerful tool, many attractive MEMS devices have been fabricated [62][63][64][65][66][67][68][69][70].…”
Section: Dry Etchingmentioning
confidence: 99%
“…15,16 The utilization of highdensity plasmas (HDP) including electron cyclotron resonance (ECR) and inductively coupled plasma (ICP) etch systems and the development of the "Bosch" deep reactive ion etch (DRIE) process 17 has contributed significantly to the development of high-aspect ratio, deep Si etching. 18,19,20,21,22,23 HDP etch systems typically yield higher etch rates under less energetic ion conditions than more conventional reactive ion etch (RIE) systems. This has been attributed to plasma densities that are 2 to 4 orders of magnitude higher and the ability to effectively decouple ion energy and plasma density.…”
Section: Drie Protocolmentioning
confidence: 99%
“…The recent development of a DRIE Si etch process has resulted in anisotropic profiles at room temperature, etch rates > 3.0 µm/min, aspect ratios > 30:1, and good dimensional control. [19][20][21][22][23] Additionally, the DRIE process has shown etch selectivities of Si to photoresist > 75:1 thereby eliminating the process complexity of hard etch masks for features deeper than 100 µm.…”
Section: Drie Protocolmentioning
confidence: 99%
“…Lithography techniques require advanced facilities and numerous process steps. A big number of researchers have demonstrated the fabrication of micro-optical elements in glass using electron beam lithography, photolithography, and wet and dry etching [8][9][10]. These techniques provide high-quality micro-optics systems, however they require very specific and sophisticated working conditions; what increase their cost.…”
Section: Introductionmentioning
confidence: 99%