2005
DOI: 10.1016/j.mee.2005.07.014
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Advanced Cu interconnects using air gaps

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Cited by 28 publications
(11 citation statements)
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“…Our multi-tier pathways can be considered as "airgap" circuits, with vacuum as a dielectric medium between the metallization lines providing the ideal dielectric separation between them. 17 Such multi-tier architectures can be used to address the parasitic capacitance occurring in closely-spaced metallization lines. 17 In order to investigate the stability of our CNT-Cu pathways, we implemented lifetime evaluation at high current densities (10 7 -10 8 A cm −2 ) and temperatures (250 °C) that Cu cannot withstand (Fig.…”
Section: Resultsmentioning
confidence: 99%
“…Our multi-tier pathways can be considered as "airgap" circuits, with vacuum as a dielectric medium between the metallization lines providing the ideal dielectric separation between them. 17 Such multi-tier architectures can be used to address the parasitic capacitance occurring in closely-spaced metallization lines. 17 In order to investigate the stability of our CNT-Cu pathways, we implemented lifetime evaluation at high current densities (10 7 -10 8 A cm −2 ) and temperatures (250 °C) that Cu cannot withstand (Fig.…”
Section: Resultsmentioning
confidence: 99%
“…16,17 In addition, sacrificial materials that are removed through wet etching rather than thermal processing have been used with the aim of lowering the total thermal budget of IC fabrication. 18,19 A previous study 12 has indicated that polyLA is a potential candidate for use as a sacrificial polymer, therefore knowledge of the adhesion and solubility characteristics are important for this and other potential applications.…”
Section: Introductionmentioning
confidence: 99%
“…An intermediate topology is also selected which groups minimum width interline and dielectric filling between to adjacent interconnects. It concerns consequently an air gap filling [20] [21].…”
Section: Numerical Resultsmentioning
confidence: 99%