Advanced coating techniques for photoresist TEM sample preparation

Sebastian, Elizabeth; Tee, Irene; Yiqiang, Shen; Lee, Kok Wah; Tam, Lai Kuan; Zhu, Jie; Zhao, S. P.

doi:10.1109/ipfa.2016.7564259

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2018

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“…To obtain a damage-free specimen, a protection layer on PR (photo-resist) substrate is required. The main deposition processes for the layer are RF sputtering Pt and PECVD oxide [1]. However, a soft PR layer has been developed in the advanced technology node to reduce the turbulence during etching process.…”

Section: Introductionmentioning

confidence: 99%

The Development of Low-Temperature Atomic Layer Deposition of HfO2 for TEM Sample Preparation on Soft Photo-Resist Substrate

Peng

Liu²,

Lin³

et al. 2018

2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

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In this study, the method of low-temperature atomic layer deposition (ALD), which is applied on the soft photo-resist (PR) substrate forming hafnium dioxide (HfO2) at 40 o C to 85 o C, is reported for the first time. This reveals the potential application in the TEM sample preparation. The thickness, refractive index, band gap, and depth profiling chemical state of the thin film are analyzed by ellipsometry, X-ray diffraction, and photoelectron spectroscopy respectively. Our TEM image shows a clear boundary between the photo-resist and hafnium dioxide deposited on PR, which indicates the low-temperature atomic layer deposition (ALD) may lead a new way for TEM sample preparation in advanced technology node.

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Section: Introductionmentioning

confidence: 99%