2018
DOI: 10.1039/c7dt02459b
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Advanced bi-functional CoPi co-catalyst-decorated g-C3N4 nanosheets coupled with ZnO nanorod arrays as integrated photoanodes

Abstract: In this work, a CoPi-decorated type II heterojunction composed of one-dimensional (1D) ZnO nanorod arrays (NRAs) coated with two-dimensional (2D) carbon nitride (g-C3N4) was successfully prepared and used as photoanode. CoPi has been speculated to be a mixture of amorphous compound and two cobalt-based compounds: Co3(PO3)6·14H2O and Co(H2PO2)2·6H2O. The advanced bi-functional CoPi acts like a shelter, effectively inhibiting the photocorrosion of CNNS/ZnO NRAs and providing a faster hole transfer channel. Syner… Show more

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Cited by 27 publications
(10 citation statements)
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“…For example, a novel Co‐Pi decorated type II ZnO/g‐C 3 N 4 NS NRA has been successfully prepared and used as photoanode (Figure 6H). 118 Similar to its effect on TiO 2 /g‐C 3 N 4 heteroarray, 114 Co‐Pi in this system can also provide a fast hole‐transfer channel from photoelectrode materials to electrolytes, thus leading to a suppressed recombination of photogenerated electrons/holes. As a result, the Co‐Pi modified ZnO/g‐C 3 N 4 NS NRA photoanode produces the higher photocurrent density (2.45 mA cm −2 at 1.23 V vs RHE) than that of the photoanode without Co‐Pi cocatalyst (0.95 mA cm −2 at 1.23 V vs RHE) under AM 1.5 G irradiation (Figure 6I and Table 1).…”
Section: Wide Bandgap Metal Oxide/g‐c3n4 Heteroarrays As Photoanodesmentioning
confidence: 87%
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“…For example, a novel Co‐Pi decorated type II ZnO/g‐C 3 N 4 NS NRA has been successfully prepared and used as photoanode (Figure 6H). 118 Similar to its effect on TiO 2 /g‐C 3 N 4 heteroarray, 114 Co‐Pi in this system can also provide a fast hole‐transfer channel from photoelectrode materials to electrolytes, thus leading to a suppressed recombination of photogenerated electrons/holes. As a result, the Co‐Pi modified ZnO/g‐C 3 N 4 NS NRA photoanode produces the higher photocurrent density (2.45 mA cm −2 at 1.23 V vs RHE) than that of the photoanode without Co‐Pi cocatalyst (0.95 mA cm −2 at 1.23 V vs RHE) under AM 1.5 G irradiation (Figure 6I and Table 1).…”
Section: Wide Bandgap Metal Oxide/g‐c3n4 Heteroarrays As Photoanodesmentioning
confidence: 87%
“…Similar to TiO 2 ; nevertheless, the poor light absorption and high recombination probability of photogenerated charges also impair the PEC performance of ZnO‐based photoanodes 139,140 . Recently, ZnO arrays have been decorated by g‐C 3 N 4 to develop the ZnO/g‐C 3 N 4 heteroarrays for the enhanced solar light harvesting and accelerated exciton separation 116‐121 . For example, a ZnO NRA has been decorated by g‐C 3 N 4 through simple reflux and TVC process (Figure 6A).…”
Section: Wide Bandgap Metal Oxide/g‐c3n4 Heteroarrays As Photoanodesmentioning
confidence: 99%
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