Advanced amorphous dielectrics for embedded capacitors

All-Inorganic Flexible Embedded Thin-Film Capacitors for Dielectric Energy Storage with High Performance

“…Flexible electronic devices, such as rollable displays, bendable mobile phones, and sensor skin, have aroused great research interest in recent years due to their portable, bendable, and wearable properties. − More importantly, electronic devices are required toward high integration; the energy conversion and energy storage become the indispensable components of flexible devices. − Among various energy storage devices, the dielectric capacitors have been selected as the key unit in power inverters due to their faster charge/discharge rates and higher power density. − Besides, the dynamic random access memory (DRAM) circuits, which served as the core parts in the memory devices, require the dielectric capacitors with very high charge storage density . Therefore, the integration of flexible, light, and microscale dielectric capacitors in the flexible devices has become one of the most important trends in the development of the next-generation energy storage device.…”

“…9−15 Besides, the dynamic random access memory (DRAM) circuits, which served as the core parts in the memory devices, require the dielectric capacitors with very high charge storage density. 16 Therefore, the integration of flexible, light, and microscale dielectric capacitors in the flexible devices has become one of the most important trends in the development of the next-generation energy storage device.…”

Unit capacitance distribution of a silicon nitride MIM capacitor in silicon wafer

“…As the circuit density increases, materials with a dielectric constant much higher than that of SiO 2 (3.9) are desired for MIM capacitor dielectrics. New high crystalline materials such as (Ba, Sr) TiO, Ti-Ta-O and TiO x have been extensively discussed [2,3]. However, the high annealing temperature (500 • C) required to crystallize these materials not only increases the films' roughness and results in high leakage current and low breakdown voltage, but is also incompatible with the standard metallization [2,3].…”

“…New high crystalline materials such as (Ba, Sr) TiO, Ti-Ta-O and TiO x have been extensively discussed [2,3]. However, the high annealing temperature (500 • C) required to crystallize these materials not only increases the films' roughness and results in high leakage current and low breakdown voltage, but is also incompatible with the standard metallization [2,3]. Alternatively, the thermal and electrical properties of the amorphous Ta and Ti oxide films can be improved by alloying with rare elements such as Dy, Zr, Sn and Al [2,3].…”