Adsorption of Primary Substituted Hydrocarbons onto Solid Gallium Substrates

Silva, Chrishani M. De; Pandey, Bipin; Li, Feng; Ito, Takashi

doi:10.1021/la400334n

Cited by 13 publications

(19 citation statements)

References 25 publications

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“…The inference that Ga 2 O 3 can act as a base (i.e., a hydrogen bond acceptor) agrees with work by Ito and co-workers. 30 We infer that a terminal T = −CO 2 H group forms bonds with the Ga 2 O 3 of the top-electrode that are stronger than van der Waals interactions involving T = −CH 3 and other groups, but that these bonds do not increase observably the tunneling current relative to a top interface having the weak van der Waals interaction of a T = −CH 3 group. 31,32 To investigate further the influence of the interaction between T = −CO 2 H and the Ga 2 O 3 of the EGaIn top electrode on the rate of charge transport, we investigated a range of lengths of ω-carboxyl-alkanethiolates (Figure 3).…”

mentioning

confidence: 75%

Introducing Ionic and/or Hydrogen Bonds into the SAM//Ga₂O₃ Top-Interface of Ag^TS/S(CH₂)_nT//Ga₂O₃/EGaIn Junctions

et al. 2014

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Junctions with the structure Ag TS /S(CH 2 ) n T// Ga 2 O 3 /EGaIn (where S(CH 2 ) n T is a self-assembled monolayer, SAM, of n-alkanethiolate bearing a terminal functional group T) make it possible to examine the response of rates of charge transport by tunneling to changes in the strength of the interaction between T and Ga 2 O 3 . Introducing a series of Lewis acidic/basic functional groups (T = −OH, −SH, −CO 2 H, −CONH 2 , and −PO 3 H) at the terminus of the SAM gave values for the tunneling current density, J(V) in A/cm 2 , that were indistinguishable (i.e., differed by less than a factor of 3) from the values observed with n-alkanethiolates of equivalent length. The insensitivity of the rate of tunneling to changes in the terminal functional group implies that replacing weak van der Waals contact interactions with stronger hydrogen-or ionic bonds at the T//Ga 2 O 3 interface does not change the shape (i.e., the height or width) of the tunneling barrier enough to affect rates of charge transport. A comparison of the injection current, J 0 , for T = −CO 2 H, and T = −CH 2 CH 3 −two groups having similar extended lengths (in Å, or in numbers of non-hydrogen atoms)−suggests that both groups make indistinguishable contributions to the height of the tunneling barrier.

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confidence: 75%

Introducing Ionic and/or Hydrogen Bonds into the SAM//Ga₂O₃ Top-Interface of Ag^TS/S(CH₂)_nT//Ga₂O₃/EGaIn Junctions

et al. 2014

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“…Due to the diatomic nature of III-V semiconductors, a thick protective layer of oxide is not available, which is problematic in both stability and in situations requiring high K dielectric properties. [23,24] In this way organic functionalization provides additional benefits needed for materials with challenging chemistry in dynamic environments.…”

Section: Introductionmentioning

confidence: 99%

Comparison of the Stability of Functionalized GaN and GaP

et al. 2015

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Surface functionalization via 1 H,1 H,2 H,2H-perfluoro octanephosphonic acid was done in the presence of phosphoric acid to provide a simplified surface passivation technique for gallium nitride (GaN) and gallium phosphide (GaP). In an effort to identify the leading causes of surface instabilities, hydrogen peroxide was utilized as an additional chemical modification to cap unsatisfied bonds. The stability of the surfaces was studied in an aqueous environment and subsequently characterized. A physical characterization was carried out to evaluate the surface roughness and water hydrophobicity pre and post stability testing via atomic force microscopy and water goniometry. Surface-chemistry changes and solution leaching were quantified by X-ray photoelectron spectroscopy and inductively coupled plasma mass spectrometry. The results indicate a sensitivity to hydroxyl terminated species for both GaN and GaP under aqueous environments, as the increase of the degree of leaching was more significant for hydrogen peroxide treated samples. The results support the notion that hydroxyl species act as precursors to gallium oxide formation and lead to subsequent instability in aqueous solutions.

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“…This implies at least two layers composed of an acetate bound on an oxide. 15 Similarly, we subjected EGaIn to a blender with distilled white vinegar as the shearing fluid (Supporting Information Figure S6). Imaging by SEM revealed a large field of nanoparticles that were 31.3 ± 6.1 nm in diameter ( Figure 2H) and also larger microparticles (Supporting Information Figure S6).…”

Section: ■ Results and Discussionmentioning

confidence: 99%

Synthesis of Liquid Core–Shell Particles and Solid Patchy Multicomponent Particles by Shearing Liquids Into Complex Particles (SLICE)

2014

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We report a simple method that uses (i) emulsion shearing with oxidation to make core-shell particles, and (ii) emulsion shearing with surface-tension driven phase segregation to synthesize particles with complex surface compositions and morphologies. Subjecting eutectic gallium-indium, a liquid metal, to shear in an acidic carrier fluid we synthesized smooth liquid core-shell particles 6.4 nm to over 10 μm in diameter. Aggregates of these liquid particles can be reconfigured into larger structures using a focused ion beam. Using Field's metal melts we synthesized homogeneous nanoparticles and solid microparticles with different surface roughness and/or composition through shearing and phase separation. This extension of droplet emulsion technique, SLICE, applies fluidic shear to create micro- and nanoparticles in a tunable, green, and low-cost approach.

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Adsorption of Primary Substituted Hydrocarbons onto Solid Gallium Substrates

Cited by 13 publications

References 25 publications

Introducing Ionic and/or Hydrogen Bonds into the SAM//Ga₂O₃ Top-Interface of Ag^TS/S(CH₂)_nT//Ga₂O₃/EGaIn Junctions

Introducing Ionic and/or Hydrogen Bonds into the SAM//Ga₂O₃ Top-Interface of Ag^TS/S(CH₂)_nT//Ga₂O₃/EGaIn Junctions

Comparison of the Stability of Functionalized GaN and GaP

Synthesis of Liquid Core–Shell Particles and Solid Patchy Multicomponent Particles by Shearing Liquids Into Complex Particles (SLICE)

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Adsorption of Primary Substituted Hydrocarbons onto Solid Gallium Substrates

Cited by 13 publications

References 25 publications

Introducing Ionic and/or Hydrogen Bonds into the SAM//Ga2O3 Top-Interface of AgTS/S(CH2)nT//Ga2O3/EGaIn Junctions

Introducing Ionic and/or Hydrogen Bonds into the SAM//Ga2O3 Top-Interface of AgTS/S(CH2)nT//Ga2O3/EGaIn Junctions

Comparison of the Stability of Functionalized GaN and GaP

Synthesis of Liquid Core–Shell Particles and Solid Patchy Multicomponent Particles by Shearing Liquids Into Complex Particles (SLICE)

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Product

Resources

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Introducing Ionic and/or Hydrogen Bonds into the SAM//Ga₂O₃ Top-Interface of Ag^TS/S(CH₂)_nT//Ga₂O₃/EGaIn Junctions

Introducing Ionic and/or Hydrogen Bonds into the SAM//Ga₂O₃ Top-Interface of Ag^TS/S(CH₂)_nT//Ga₂O₃/EGaIn Junctions