1991
DOI: 10.1016/0167-2584(91)90009-g
|View full text |Cite
|
Sign up to set email alerts
|

Adsorption of H on Si(111)-√3 × √3-Ag: evidence for Ag(111) agglomerates formation

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2019
2019
2019
2019

Publication Types

Select...
1

Relationship

0
1

Authors

Journals

citations
Cited by 1 publication
(1 citation statement)
references
References 39 publications
0
1
0
Order By: Relevance
“…The disruption of the Si(111)-√3×√3-Ag surface has also been observed for the adsorption of H atoms on the Si(111)-√3×√3-Ag surface, in which the formation of Ag(111) agglomerates induced by the adsorption of H atoms at room temperature has also been reported. 75 It was claimed that the conversion process of √3×√3-Ag to Ag metallic cluster could be reversed after (recombinative) desorption of H atoms at 500 °C. In our experiment, increasing the annealing temperature to 500 °C shows no change in the Ag 3d spectra in 3a1 shows the empty-state STM images of a pristine Si(111)-√3×√3-Ag surface (i.e., before any cysteine exposure).…”
Section: ■ Results and Discussionmentioning
confidence: 99%
“…The disruption of the Si(111)-√3×√3-Ag surface has also been observed for the adsorption of H atoms on the Si(111)-√3×√3-Ag surface, in which the formation of Ag(111) agglomerates induced by the adsorption of H atoms at room temperature has also been reported. 75 It was claimed that the conversion process of √3×√3-Ag to Ag metallic cluster could be reversed after (recombinative) desorption of H atoms at 500 °C. In our experiment, increasing the annealing temperature to 500 °C shows no change in the Ag 3d spectra in 3a1 shows the empty-state STM images of a pristine Si(111)-√3×√3-Ag surface (i.e., before any cysteine exposure).…”
Section: ■ Results and Discussionmentioning
confidence: 99%