Adsorption and decomposition studies of t-butyl silane on Si(100)-(2 × 1) surfaces using FTIR-ATR spectroscopy

Rudkevich, E.; Saulys, Dovas A.; Gaines, Donald F.; Kuech, T. F.; McCaughan, L.

doi:10.1016/s0039-6028(97)00120-9

Cited by 6 publications

(4 citation statements)

References 13 publications

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“…The gas phase β-hydride elimination reaction is found to be endothermic by ∼21 kcal/mol . The activation energy for β-hydride elimination occurring on the surface was believed to be higher than this value. , The conversion of the surface alkyl species to alkene through such an endothermic hydride elimination process thus is too slow at the substrate temperature of −160 °C to be significant. − In other words, the observed low-temperature decomposition of tBAA to produce isobutene on Si(100) cannot be attributed mainly to the tert -butyl fragments undergoing β-hydride elimination on the surface. The β-hydride elimination pathway of the surface alkyl species is not the main source for the observed isobutene signals in the SSIMS spectrum (Figure ) for low doses of tBAA on Si(100).…”

Section: Discussionmentioning

confidence: 98%

“…The peak temperature range for m/e 56 and the absence of the m/e 57 peak are consistent with our observations (Figure ). Based on Fourier transform infrared-attenuated total reflection (FTIR-ATR) and TPD studies of the reaction of tert -butyl silane on Si(100), E. Rudkevich et al also concluded the presence of isobutene on the surface, after bond cleavage first took place at the Si−C bond to form tert-butyl species . These reports reveal that the production of alkene on the Si(100) surface does not have to go through the alkoxy reaction pathway, because in either case no surface alkoxy intermediates can be generated.…”

Section: Discussionmentioning

confidence: 99%

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A SSIMS and TPD Study of tert-Butylacetylacetate Adsorption on Si(100)

et al. 2001

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Adsorption and decomposition of tert-butylacetylacetate (tBAA) on Si(100) have been investigated using static secondary ion mass spectrometry and temperature-programmed desorption. At low doses, all tBAA molecules dissociate readily upon adsorption on the surface at temperatures as low as -160 °C. The dissociation may occur through tBAA bonding via the ester oxygen or the carbonyl group to the surface. The bond scission occurring at the tBuO-CO bond leads to the formation of surface tert-butoxide. Further dehydrogenation can take place to yield isobutene and surface hydroxyl species. Subsequent heating of the substrate causes the hydroxyl to decompose, and the resulting substoichiometric silicon oxide sublimes as SiO. The surfaceinduced bond scission also occurs at the OC-CCO bond of the tBAA diketo moiety to produce isobutene. In addition, the OC-CCO bond scission induced by tBAA surface bonding, mainly via its carboxylic keto oxygen, affords acetaldehyde radical, whereas that induced mainly via the aceto oxygen yields carbon dioxide and isopropenoxy species. An enol-keto conversion takes place when isopropenoxy species acquire surface hydrogen to yield acetone, even at low substrate temperature of less than -126 °C. The aceto oxygen pathway dominates the cleavage of the OC-CCO bond. Increasing substrate temperature also causes the surface tertbutyl fragments to further react through different β-hydride elimination pathways, forming isobutene, which is either in the gaseous state or bound to the surface in a di-σ configuration.

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Section: Discussionmentioning

confidence: 98%

Section: Discussionmentioning

confidence: 99%

A SSIMS and TPD Study of tert-Butylacetylacetate Adsorption on Si(100)

et al. 2001

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“…Figure 4 showed the FTIR spectra of epoxy resin before and after curing in the wavenumber range of 550–4000 cm −1 . The strength for adsorption band at 915 cm −1 of epoxy substrates pronouncedly decreased, due to the consumption of epoxy substrates 21, 26, 28, 29. When the quality of curing agent (polyamide resin) was the half of the one of epoxy resin ( m E‐51 : m PA = 2 : 1), conductive adhesive was just completely cured according to the intensity of the adsorption band at 915 cm −1 .…”

Section: Resultsmentioning

confidence: 99%

Copper particles/epoxy resin thermosetting conductive adhesive using polyamide resin as curing agent

Dang

Zha

et al. 2012

J of Applied Polymer Sci

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Thermosetting conductive adhesive (TCA) comprised of epoxy resin E-51 as matrix, Cu microparticles and nanoparticles modified by silane coupling KH550 as conductive fillers, polyamide resin with low molecular weight as curing agent, and some other additives. It was reported creatively a new liquid curing agent, which solved successfully some difficult problems during preparation of TCA, such as limit of quantity of conductive fillers. Therefore, application of this liquid curing agent decreased greatly the resistivity of TCA under the condition of keeping enough adhesion strength. Antioxidized and mixed Cu particles were developed as conductive fillers in place of expensive Ag. The results showed that optimum conditions of conductive adhesive composed of 16 wt % of epoxy resin E-51, 8 wt % polyamide resin, 65 wt % of Cu microparticles and nanoparticles, 1.3 wt % of silane coupling agent, and 9 wt % of other additives with curing time for 4 h at 60 C. The adhesion strength reached 16.7 MPa and the bulk resistivity was lower than 3.7 Â 10 À4 X cm. The variation of bulk resistivity was less than 15% at high temperature (100 C).

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“…Its relatively high vapor pressure, ~0.07 torr at 25°C and 1 Torr at 65°C, is an added advantage in that it can be handled at low temperatures, minimizing the heating of precursor and delivery lines [6]. In situ ATR-FTIR spectroscopy is an efficient and non-invasive tool for observing metal organometallic reactions on Si [7,8,9,10]. In this study, the adsorption of HtB on Si and Ge ATR crystal elements was observed as a function of substrate temperature.…”

Section: Introductionmentioning

confidence: 96%

In situ ATR - FTIR spectroscopy of Hf(IV) tert butoxide adsorption on Si and Ge

Dubey

Bhandari

et al. 2006

MRS Proc.

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Hafnium oxide ultra thin films on Si (100) are being developed to replace thermally grown SiO 2 gates in CMOS devices. In this work, a specially designed Attenuated Total Reflectance -Fourier Transform Infra Red Spectroscopy (ATR-FTIR) reaction cell has been developed to observe chemisorption of hafnium (IV) t-butoxide onto a Si and Ge ATR crystal heated up to 250°C and under 1 torr of vacuum to observe the initial reaction pathways and species on the substrate surface in real time and under typical process conditions. Chemisorption spectra were compared to spectra of the liquid precursor and to spectra generated by density functional theory (DFT) calculations of liquid, monodentate and bidentate absorbed precursor. An asymmetric stretching mode located at ~1017 cm -1 present in the chemisorbed spectra but not in the liquid spectra indicates that the adsorbed hafnium containing group is prevalent as a bidentate ligand according to calculations. Surface concentration of the chemisorbed species was dependant on the substrate temperature and precursor partial pressure allowing for determination of heats of adsorption which was 26.5 kJ/mol on Si.

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Adsorption and decomposition studies of t-butyl silane on Si(100)-(2 × 1) surfaces using FTIR-ATR spectroscopy

Cited by 6 publications

References 13 publications

A SSIMS and TPD Study of tert-Butylacetylacetate Adsorption on Si(100)

A SSIMS and TPD Study of tert-Butylacetylacetate Adsorption on Si(100)

Copper particles/epoxy resin thermosetting conductive adhesive using polyamide resin as curing agent

In situ ATR - FTIR spectroscopy of Hf(IV) tert butoxide adsorption on Si and Ge

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