Adsorbed layer and thin film growth modes monitored by Auger electron spectroscopy

Argile, C.; Rhead, G.E.

doi:10.1016/0167-5729(89)90001-0

Cited by 451 publications

(173 citation statements)

References 476 publications

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“…The rate of deposition was determined by evaporating Si on a polycrystalline Au substrate and determining the coverage by AES. 22 In this study only two cases have been considered: 0.3 ML and 3 ML. Base pressure during the ulterior annealing of the Si 3 ML thick film has been monitored to be always below 10 −9 mbar to avoid contamination by traces of H 2 O or other residual gases (the sample holder was thoroughly degassed by going to higher temperatures than the ones used for Si deposition).…”

Section: Methodsmentioning

confidence: 99%

Characterization of thin silicon overlayers on rutileTiO2(110)−(1×1)

et al. 2010

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Section: Methodsmentioning

confidence: 99%

Characterization of thin silicon overlayers on rutileTiO2(110)−(1×1)

et al. 2010

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“…However, the uptake curve of the two surfaces (111) and (5 512) show differences in both the segments of the curve. To accurately determine the break point, we have used the SSQ (sum of squares of errors) method [24] from the literature, where one calculates the errors in the slopes ofthe linear fit to the points around which a break is suspected. The calculated SSQ is plotted as a dashed curve along with the uptake curve in Fig.…”

Section: Methodsmentioning

confidence: 99%

Clustering and layering of In adatoms on low and high index silicon surfaces: A comparative study

et al. 2010

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Using the morphological differences of low and high index surfaces as templates for metal growth, several low dimensional overlayer structures with novel structural and electronic properties can be formed. We present here a first report on submonolayer adsorption and residual thermal desorption studies of In adatoms on reconstructed high index Si (55 12)-2x1 surface and compare it with the observations on planar Si (111) -7 x 7 surface. The study is done by using in-situ Ultra High Vacuum surface sensitive probes like Auger Electron Spectroscopy (AES) and Low Energy Electron Diffraction (LEED). These conventional wide area techniques provide an understanding of atomistic issues involved in the evolution of the interface. We have observed an anomalous growth mode during adsorption at room temperature (RT) above 2ML, which includes adatom layering and clustering on Si (111) surface. This is also manifested during the desorption experiments on both surfaces, and the subtle differences on the two surfaces are discussed. The observation of LEED pattern during the adsorption process shows formation of different superstructural phases on Si (111 )-7 x 7 surface. On Si (5512) 2 x 1 surface we observe the sequential2x (225), 2x (337) and 2x (113) facet formation during adsorption/desorption, which include quasi 1D-nanowire/chain structures. A combination of lattice strain effects, presence of step-edge barrier and quantum size effects are employed to speculate the differences in adsorption and desorption.

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“…6 have been developed over the last several decades. Most of these originated and evolved in the context of specific experimental techniques, such as Auger Electron Spectroscopy (AES) [33][34][35][36] , ion-beam assisted deposition [37][38][39] , and RHEED 40,41 .…”

Section: B Layer-wise Rate Equation Model Of Epitaxial Growthmentioning

confidence: 99%

Quantitative modeling ofin situx-ray reflectivity during organic molecule thin film growth

2011

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Synchrotron-based x-ray reflectivity is increasingly employed as an in situ probe of surface morphology during thin film growth, but complete interpretation of the results requires modeling the growth process. Many models have been developed and employed for this purpose, yet no detailed, comparative studies of their scope and accuracy exists in the literature. Using experimental data obtained from hyperthermal deposition of pentane and diindenoperylene (DIP) on SiO2, we compare and contrast three such models, both with each other and with detailed characterization of the surface morphology using ex-situ atomic force microscopy (AFM). These two systems each exhibit particular phenomena of broader interest: pentacene/SiO2 exhibits a rapid transition from rough to smooth growth. DIP/SiO2, under the conditions employed here, exhibits growth rate acceleration due to a different sticking probability between the substrate and film. In general, independent of which model is used, we find good agreement between the surface morphology obtained from fits to the in situx-ray data with the actual morphology at early times. This agreement deteriorates at later time, once the root-mean squared (rms) film roughness exceeds about 1 ML. A second observation is that, because layer coverages are under-determined by the evolution of a single point on the reflectivity curve, we find that the best fits to reflectivity data -corresponding to the lowest values of χ 2 ν -do not necessarily yield the best agreement between simulated and measured surface morphologies. Instead, it appears critical that the model reproduce all local extrema in the data. In addition to showing that layer morphologies can be extracted from a minimal set of data, the methodology established here provides a basis for improving models of multilayer growth by comparison to real systems.

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Adsorbed layer and thin film growth modes monitored by Auger electron spectroscopy

Cited by 451 publications

References 476 publications

Characterization of thin silicon overlayers on rutileTiO2(110)−(1×1)

Characterization of thin silicon overlayers on rutileTiO2(110)−(1×1)

Clustering and layering of In adatoms on low and high index silicon surfaces: A comparative study

Quantitative modeling ofin situx-ray reflectivity during organic molecule thin film growth

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