Admittance spectroscopy using for the determination of parameters of Si nanoclusters embedded in SiO&lt;inf&gt;2&lt;/inf&gt;

Ilchenko, V. V.; Marin, V. V.; Vasyliev, Iegor; Tretyak, O. V.; Bratus, O.L.; Еvtukh, А.А.

doi:10.1109/elnano.2014.6873969

Cited by 3 publications

(3 citation statements)

References 16 publications

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“…Investigation of structural properties of the nanocomposite SiO 2 (Si) films obtained using the IPS method with the following high-temperature annealing enabled to establish the basic peculiarities of silicon nanocrystals growth in dependence on technological regimes and to determine their size and surface density [6]. The technological regimes during formation of samples under investigation provide the silicon nanocrystals with the diameter of 3…4 nm [7]. In the assumption of uniform distribution of the nanocrystals in the film, the thickness of the dielectric layers between the nanocrystals is 10 to 15 nm.…”

Section: Resultsmentioning

confidence: 99%

Electron transport through nanocomposite SiO<inf>2</inf>(Si) films containing Si nanocrystals

Еvtukh

Bratus

Steblova

et al. 2015

2015 IEEE 35th International Conference on Electronics and Nanotechnology (ELNANO)

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The current transport through insulating SiO 2 films with silicon nanocrystals in Si/SiO 2 (Si)/Al structures has been investigated in the wide range of temperatures (82…350 K). The nanocomposite SiO 2 (Si) films containing the silicon nanoclusters embedded into insulating SiO 2 matrix have been obtained by ion-plasma sputtering of silicon target and subsequent high-temperature annealing. Based on the detailed analysis of current-voltage characteristics, calculation of some electrical parameters has been performed and the mechanism of electron conductivity of nanocomposite SiO 2 (Si) films has been ascertained. The electrical conductivity of the films is based on the mechanism of hopping conductivity with variable-range hopping through the traps near the Fermi level.

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Section: Resultsmentioning

confidence: 99%

Electron transport through nanocomposite SiO<inf>2</inf>(Si) films containing Si nanocrystals

Еvtukh

Bratus

Steblova

et al. 2015

2015 IEEE 35th International Conference on Electronics and Nanotechnology (ELNANO)

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“…5). The slope of the line segment in the corresponding coordinates determines the activation energy of energy level for the capture of the electrons [7][8][9]. The activation energy of electron states responsible for the existence of the wide capacitive peak (before low-temperature annealing in hydrogen) was about 0.23 eV.…”

Section: Si X O Y N Z Filmsmentioning

confidence: 99%

“…Because of the new abilities to accumulate the carriers of a charge in the quantum dots or nanoclusters which could be built into various semiconductor heterojunctions such structures are capable to show the certain physical phenomenon connected with charge of nanoclusters and reveal some specific features in capacitance-voltage (C-V) dependences [4][5][6][7]. Such parameters of quantum dots or nanoclusters, as concentration, energy position and capture cross-section can be determined based on the investigation of the C-V dependences.…”

Section: Introductionmentioning

confidence: 99%

Capacitive Properties of MIS Structures with SiOx and SixOyNz Films Containing Si Nanoclusters

Еvtukh

Bratus

Ilchenko

et al. 2016

JNanoR

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he negative differential capacity has been observed in case of MIS structures with SiOx and SixOyNz films containing Si nanoclusters. It has been shown that existence of negative differential capacity depends on charge state of Si nanoclusters or electron traps　in the insulating matrix. In case of SixOyNz films the two peaks have been revealed in C-V characteristics connected with Si nanoclusters and electron traps. The low-temperature annealing of SixOyNz films in hydrogen passivates the electron traps caused by Si dangling bonds and as a result the peak in C-V characteristics connected with electron traps disappears. The following low-temperature annealing in vacuum caused the some effusion of hydrogen from the film and appearance of electron traps and connected with them capacity shoulder on C-V characteristics. It has been shown, that the frequency and temperature dependences of the negative differential capacitance in C-V curves can be successfully used for the determination of nanoclusters and traps parameters for the samples with the nanoclusters embedded in SiO2 or SixOyNz films.

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Structure and electrical conductivity of nanocomposite SiOxNy(Si) and SiAlzOxNy(Si) films

Evtukh,

Kizjak,

Bratus’

et al. 2023

Journal of Alloys and Compounds

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Admittance spectroscopy using for the determination of parameters of Si nanoclusters embedded in SiO<inf>2</inf>

Cited by 3 publications

References 16 publications

Electron transport through nanocomposite SiO<inf>2</inf>(Si) films containing Si nanocrystals

Electron transport through nanocomposite SiO<inf>2</inf>(Si) films containing Si nanocrystals

Capacitive Properties of MIS Structures with SiO<sub>x</sub> and Si<sub>x</sub>O<sub>y</sub>N<sub>z</sub> Films Containing Si Nanoclusters

Structure and electrical conductivity of nanocomposite SiOxNy(Si) and SiAlzOxNy(Si) films

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