Admittance spectroscopy of Cu2ZnSnS4 based thin film solar cells

Fernandes, Paulo A.; Sartori, André F.; Salomé, Pedro M. P.; Malaquias, João; Cunha, A. F. da; Graça, M.P.F.; González, J. C.

doi:10.1063/1.4726042

Cited by 82 publications

(70 citation statements)

References 16 publications

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“…When heating with a fast heating rate (above 2.6 K s -1 ), which leads to formation of larger grains, the films show increased conductivity, with an average of 2.5 ×10 -2 Ω -1 cm -1 (average from 14 samples). This value is comparable with conductivities observed for CZTS films prepared by sulfurization of metallic precursors [39], which is an approved method for fabrication of CZTS solar cells [40][41][42]. Above a heating rate of 2.6 K s -1 no systematic dependency on the heating rate could be observed.…”

Section: Resultssupporting

confidence: 84%

Phase-transition-driven growth of compound semiconductor crystals from ordered metastable nanorods

et al. 2014

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Section: Resultssupporting

confidence: 84%

Phase-transition-driven growth of compound semiconductor crystals from ordered metastable nanorods

et al. 2014

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“…Figure 8 shows the Cole-Cole plot for cell S10 for voltage bias ranging -1 mV to -544 mV. Figure 9 presents the equiva- lent circuits that were used to adjust the experimental admit-tance data [31]. The simplest circuit, M1, corresponds to a device characterized by a series resistance, Rs, and a parallel capacitance and resistance, Cj and Rj, respectively.…”

Section: Impedance Spectroscopymentioning

confidence: 99%

Effects of sulphurization time on Cu2ZnSnS4 absorbers and thin films solar cells obtained from metallic precursors

Fernandes

Salomé

Sartori

et al. 2013

Solar Energy Materials and Solar Cells

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We report the results of a study of the sulphurization time effects on Cu2ZnSnS4 absorbers and thin film solar cells prepared from dc-sputtered stacked metallic precursors. Three different time intervals, 10 min, 30 min and 60 min, at maximum sulphurization temperature were considered. The effects of this parameter' change were studied both on the absorber layer properties and on the final solar cell performance. The composition, structure, morphology and thicknesses of the CZTS layers were analysed. The electrical characterization of the absorber layer was carried out by measuring the transversal electrical resistance of the samples as a function of temperature. This study shows an increase of the conductivity activation energy from 10 meV to 54 meV for increasing sulphurization time from 10 min to 60 min. The solar cells were built with the following structure: SLG/Mo/CZTS/CdS/i-ZnO/ZnO:Al/Ni:Al grid. Several ac response equivalent circuit models were tested to fit impedance measurements. The best results were used to extract the device series and shunt resistances and capacitances. Absorber layer's electronic properties were also determined using the Mott-Schottky method. The results show a decrease of the average acceptor doping density and built-in voltage, from 2.0×10 17 cm −3 to 6.5×10 15 cm −3 and from 0.71 V to 0.51 V, respectively, with increasing sulphurization time. This results also show an increase of the depletion region width from approximately 90 nm to 250 nm.

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“…The precursor deposition was carried out by dc magnetron sputtering and sulfurization by thermal annealing in a sulfur vapour atmosphere [6,7]. In order to make accurate transport measurements and to avoid any possible influence of the generally observed MoS x layer at the Mo/CZTS interface [5], the CZTS thin film studied here was deposited directly on the SLG substrate. However, the morphology, chemical composition, crystalline structure, as well as optical properties of this sample are similar to those prepared using the Mo layer.…”

Section: Sample Preparationmentioning

confidence: 99%

“…the CZTS absorber layer and the Mo back contact have been pointed out as factors that reduce the solar cell efficiency [4,5]. Strong research efforts have been made in the study of different CZTS synthesis routes [3][4][5][6][7][8][9][10], CZTS structural and optical properties [2,[6][7][8], as well as in the development of CZTS solar cells [3-5, 9, 10].…”

Section: Introductionmentioning

confidence: 99%

Hopping conduction and persistent photoconductivity in Cu₂ZnSnS₄thin films

González¹,

Ribeiro²,

Viana³

et al. 2013

J. Phys. D: Appl. Phys.

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The temperature dependence of electrical conductivity and the photoconductivity of polycrystalline Cu 2 ZnSnS 4 were investigated. It was found that at high temperatures the electrical conductivity was dominated by band conduction and nearest-neighbour hopping. However, at lower temperatures, both Mott variable-range hopping (VRH) and Efros-Shklovskii VRH were observed. The analysis of electrical transport showed high doping levels and a large compensation ratio, demonstrating large degree of disorder in Cu 2 ZnSnS 4 . Photoconductivity studies showed the presence of a persistent photoconductivity effect with decay time increasing with temperature, due to the presence of random local potential fluctuations in the Cu 2 ZnSnS 4 thin film. These random local potential fluctuations cannot be attributed to grain boundaries but to the large disorder in Cu 2 ZnSnS 4 .the CZTS absorber layer and the Mo back contact have been pointed out as factors that reduce the solar cell efficiency [4,5]. Strong research efforts have been made in the study of different CZTS synthesis routes [3][4][5][6][7][8][9][10], CZTS structural and optical properties [2,[6][7][8], as well as in the development of CZTS solar cells [3-5, 9, 10]. However, very little is known about the electrical transport and photoconductivity properties of CZTS thin films and further studies are required.The study of the temperature dependence of electrical transport in semiconductor materials is very important for the knowledge of material parameters, the understanding of the transport and microscopic mechanisms of charge transfer, as well as for the optimization and design of solar cells. Very recently, we have shown that the radiative and non-radiative recombination mechanisms in CZTS thin films are strongly

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Admittance spectroscopy of Cu2ZnSnS4 based thin film solar cells

Cited by 82 publications

References 16 publications

Phase-transition-driven growth of compound semiconductor crystals from ordered metastable nanorods

Phase-transition-driven growth of compound semiconductor crystals from ordered metastable nanorods

Effects of sulphurization time on Cu2ZnSnS4 absorbers and thin films solar cells obtained from metallic precursors

Hopping conduction and persistent photoconductivity in Cu₂ZnSnS₄thin films

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Admittance spectroscopy of Cu2ZnSnS4 based thin film solar cells

Cited by 82 publications

References 16 publications

Phase-transition-driven growth of compound semiconductor crystals from ordered metastable nanorods

Phase-transition-driven growth of compound semiconductor crystals from ordered metastable nanorods

Effects of sulphurization time on Cu2ZnSnS4 absorbers and thin films solar cells obtained from metallic precursors

Hopping conduction and persistent photoconductivity in Cu2ZnSnS4thin films

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Hopping conduction and persistent photoconductivity in Cu₂ZnSnS₄thin films