Admittance spectroscopy as a method for investigating relaxation processes in quantum-sized heterostructures

Зубков, В. И.; Yakovlev, I. N.; Koucherova, O. V.; Orlova, T. S.

doi:10.3103/s1062873811100339

Cited by 5 publications

(3 citation statements)

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“…Admittance measurements were carried out by means of computer-controlled setup, the main parts of which are RLC-meter Agilent E4980A, closed-cycle helium probe station Janis CCR-10, and temperature controller LakeShore 336. [11][12][13] A deep trap like boron in single crystal diamond can be characterized by emission rate of charge carriers to the corresponding band (valence band in our case): [14] …”

Section: Methods Of Characterizationmentioning

confidence: 99%

“…The experimental apparatus used in this study was a purpose built computer-controlled admittance spectroscopy setup which covers a temperature range 20 -450 К and frequency range 1 kHz -2 MHz. [11][12][13] By measurement and appropriate simulations, full characterization of electronic properties for boron impurity in 4 natural type IIb diamonds has been obtained, including the distribution of majority charge carrier concentrations and the thermionic emission characteristics.…”

Section: Introductionmentioning

confidence: 99%

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Characterization of electronic properties of natural type IIb diamonds

Зубков

Solomnikova

Post

et al. 2017

Diamond and Related Materials

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Precision admittance spectroscopy measurements were carried out over wide temperature and frequency ranges for a set of natural single crystal type IIb diamond samples. Peaks of conductance spectra vs. temperature and frequency were used to compute the Arrhenius plots, and activation energies were derived from these plots. The capacitance-voltage profiling was used to estimate the majority charge carrier concentration and its distribution into depth of the samples. Apparent activation energies between 315 and 325 meV and the capture cross section of about 10 -13 cm 2 were found for samples with uncompensated boron concentrations in the range of 1 to 5 x 10 16 cm -3 (0.06-0.3 ppm). The obtained boron concentrations are in good coincidence with FTIR results for the samples. Also, the reason the difference between the observed admittance activation energy and the previously reported ionization energy for the acceptor boron in diamond (0.37 eV) is proposed. Graphical abstract Highlights Admittance spectroscopy is a powerful and nondestructive technique, which allows one to obtain characteristics of electronic spectra for doped diamonds  The combination of temperature and frequency admittance spectra give the convenient and tunable set of tools for the comprehensive analysis of impurity and defect levels, their activation energies and capture cross sections  For the first time the activation energy and the capture cross section for boron deep center in natural diamond was obtained by admittance spectroscopy with high precision: for all natural "blue" diamonds (type IIb) the apparent activation energy is 315-325 meV, with the mean square error (MSE) for every sample no more than 1-2 meV. The reasons for the difference with the optical ionization energy is discussed

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Section: Methods Of Characterizationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Characterization of electronic properties of natural type IIb diamonds

Зубков

Solomnikova

Post

et al. 2017

Diamond and Related Materials

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show abstract

“…These methods are intended to determine the energy param eters of the deep states, which can be levels of traps in the forbidden energy gap and levels of the dimensional quantization of quantum wells or quantum dots. This procedure is based on the condition of equality the external excitation frequency ω and the thermal emis sion rate of charge carriers e n from the level [13,15]:…”

Section: (3)mentioning

confidence: 99%

An automated system based on cryogenic probe station for integrated studies of semiconductor light-emitting structures and wafers in the range of 15 to 475 K

et al. 2015

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An automated system for integrated electrophysical and optical studies of semiconductor nano heterostructures, which operates in a wide temperature range from 15 to 475 K, is designed. The setup is intended to measure the temperature and frequency admittance and electroluminescence spectra of light emitting diode and laser chips formed on substrates of diameter up to 50.2 mm, and the distribution of param eters over the wafer. The setup includes the closed cycle helium cryogenic station, LCR meter, and temper ature controller. The characterization results of nanoheterostructures with InGaN/GaN multiple quantum wells, which are used for creating highly efficient white and blue light emitting diodes, are presented.

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Electrical characterization and thermal admittance spectroscopy analysis of InGaN/GaN MQW blue LED structure

Bourim

Han

2015

Electron. Mater. Lett.

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Admittance spectroscopy as a method for investigating relaxation processes in quantum-sized heterostructures

Cited by 5 publications

References 5 publications

Characterization of electronic properties of natural type IIb diamonds

Characterization of electronic properties of natural type IIb diamonds

An automated system based on cryogenic probe station for integrated studies of semiconductor light-emitting structures and wafers in the range of 15 to 475 K

Electrical characterization and thermal admittance spectroscopy analysis of InGaN/GaN MQW blue LED structure

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