Adjustable effects of zinc substitution for indium on the thermoelectric properties of p-type CuInSe2.02

Yang, Nannan; Chen, Changchun; Pan, Lin; Zhao, Yaqing; Wang, Yifeng

doi:10.1016/j.jallcom.2020.156410

Cited by 8 publications

(11 citation statements)

References 23 publications

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“…材料的载流子热导率可以通过经典的Wiedemann- [35] , AgInTe 2 [38] , AgIn 5 Se 8 [30] 和 CuInSe 2 [39] 等, 且在平行于烧结压力方向上样品的晶格热导率均低于垂直于烧结压力方向. 如沿着平行烧结压力方向, y = 0.384样品室温时的晶格热导率…”

Section: 材料的热导率包括载流子热导率和晶格热导率两部分即unclassified

“…AgInTe 2 [38] , AgIn 5 Se 8 [30] 和CuInSe 2 [39] 的晶格热导率; (c) Ag y In 3.33-y/3 Se 5 , AgInSe 2 [35] , AgIn 5 Se 8 [30] , Ag 1.03 In 5 Se 8 [30] , Ag 0.9 Cd 0.1 InSe 8 [35] ,…”

Section: 结合实测的电热输运性能我们计算了Ag Yunclassified

“…Ag 1.02 InSe 2 [35] , Ag 1.6 InSe 2.3 [40] 的ZT值, 300-873 K; (d) 300-850 K的平均ZT avg 值 Ag y In 3.33 -y/3 Se 5 , AgInSe 2 [35] , AgInTe 2 [38] , AgIn 5 Se 8 [30] and CuInSe 2 [39] ; (c) merit ZT for Ag y In 3.33 -y/3 Se 5 , AgInSe 2 [35] , AgIn 5 Se 8 [30] ,…”

Section: 结合实测的电热输运性能我们计算了Ag Yunclassified

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Structure and thermoelectric performance of AgyIn3.33–y/3Se5 compounds

訾鹏¹,

白辉²,

汪聪³

et al. 2022

Acta Phys. Sin.

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In this study, we found new AgyIn3.33-y/3Se5 compounds in Ag-In-Se system by static diffusion method combined with common X-ray diffraction and backscattering electron analysis. The crystal structure belongs to the trilateral system with the P3m1 space group, which features with a two-dimensional layered structure. The unit cell is composed of 9-atom quantum layers arranged in the sequence of Se1-In1-Se2-In2-Se3-Ag/In3-Se4-In4-Se5, and in-between these layers are combined by the weak van der Waals force. The sintered bulk samples show highly anisotropic transport properties and have ultralow lattice thermal conductivity along the direction parallel to sintering pressure about 0.15 W m-1 K-1 at 873 K. The intrinsically ultralow lattice thermal conductivity mainly comes from low phonon velocity and the strong coupling between low frequency optical phonon and acoustic phonons. AgxIn3.33-x/3Se5 compounds behave as an n-type conduction. The electrical conductivity is 4×104 S m-1 and the Seebeck coefficient is - 80 μV K-1 at room temperature. Therefore, AgxIn3.33-x/3Se5 compounds show high electrical transport properties in a wide temperature range, and the power factor is around 5 μW cm-1 K-2 in the range of 450-800 K. Due to the ultra-low lattice thermal conductivity along the direction parallel to sintering pressure, Ag0.407In3.198Se5 reached a maximum ZT of 1.01 at 873 K and an average ZT of 0.45 at 300 K-850 K. The discovery of AgyIn3.33-y/3Se5 expands the n-type Copper based Chalcogenide and lays an important foundation for the application of Copper based Chalcogenide.

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Section: 材料的热导率包括载流子热导率和晶格热导率两部分即unclassified

“…AgInTe 2 [38] , AgIn 5 Se 8 [30] 和CuInSe 2 [39] 的晶格热导率; (c) Ag y In 3.33-y/3 Se 5 , AgInSe 2 [35] , AgIn 5 Se 8 [30] , Ag 1.03 In 5 Se 8 [30] , Ag 0.9 Cd 0.1 InSe 8 [35] ,…”

Section: 结合实测的电热输运性能我们计算了Ag Yunclassified

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Structure and thermoelectric performance of AgyIn3.33–y/3Se5 compounds

訾鹏¹,

白辉²,

汪聪³

et al. 2022

Acta Phys. Sin.

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“…(B) Current state‐of‐the‐art bulk diamondoid thermoelectric materials, the figure‐of‐merit ZT as a function of temperature and year illustrating important milestones, the red rectangular bars represent the n‐type materials, while green bars represent the p‐type ones. [ 101,102,107–128 ]…”

Section: Introductionmentioning

confidence: 99%

“…[ 101,103,107–109 ] Since then, diamondoid materials have attracted more attention in thermoelectricity, and researchers have discovered many high thermoelectric performance diamondoid compounds, such as Cu 2 ZnSnSe 4 , [ 108,136–138 ] CuInTe 2 , [ 139–142 ] CuGaTe 2 , [ 110,143–145 ] Cu 2 SnSe 3 , [ 146–148 ] and Cu 3 SbSe 4 , [ 111,149–152 ] as shown in Figure 1B. [ 101,102,107–128 ] The ZT values for the best p‐type diamondoid materials range from ~1.6 to 1.8, [ 110,111,121 ] while for n‐type materials, the highest ZT value is around 1.0. [ 127,153,154 ] In addition, a two‐couple diamondoid thermoelectric device was fabricated based on the p‐type Cu 0.99 In 0.6 Ga 0.4 Te 2 and n‐type Ag 0.9 Cd 0.1 InSe 2 , which shown a maximal output power of 0.06 W under a temperature difference of 520 K. [ 127 ] Because diamondoid materials form a large class of semiconductors that can often create solid solutions with each other, they offer a broad range of possibilities for customizing electronic and thermal properties.…”

Section: Introductionmentioning

confidence: 99%

Lattice dynamics and thermoelectric properties of diamondoid materials

Xie,

Zhao,

Kanatzidis

2024

Interdisciplinary Materials

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The diamondoid compounds are a large family of important semiconductors, which possess various unique transport properties and had been widely investigated in the fields of photoelectricity and nonlinear optics. For a significantly long period of time, diamondoid materials were not given much attention in the field of thermoelectricity. However, this changed when a series of diamondoid compounds showed a thermoelectric figure of merit (ZT) greater than 1.0. This discovery sparked considerable interest in further exploring the thermoelectric properties of diamondoid materials. This review aims to provide a comprehensive view of our current understanding of thermal and electronic transport in diamondoid materials and stimulate their development in thermoelectric applications. We present a collection of recent discoveries concerning the lattice dynamics and electronic structure of diamondoid materials. We review the underlying physics responsible for their unique electrical and phonon transport behaviors. Moreover, we provide insights into the advancements made in the field of thermoelectricity for diamondoid materials and the corresponding strategies employed to optimize their performance. Lastly, we emphasize the challenges that lie ahead and outline potential avenues for future research in the domain of diamondoid thermoelectric materials.

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Enhanced thermoelectric performance of n-type PbSe by pyrite FeSe2 alloying

Zhao

Lang³

et al. 2023

Journal of Alloys and Compounds

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Adjustable effects of zinc substitution for indium on the thermoelectric properties of p-type CuInSe2.02

Cited by 8 publications

References 23 publications

Structure and thermoelectric performance of Ag<sub><i>y</i></sub>In<sub>3.33–<i>y</i>/3</sub>Se<sub>5</sub> compounds

Structure and thermoelectric performance of Ag<sub><i>y</i></sub>In<sub>3.33–<i>y</i>/3</sub>Se<sub>5</sub> compounds

Lattice dynamics and thermoelectric properties of diamondoid materials

Enhanced thermoelectric performance of n-type PbSe by pyrite FeSe2 alloying

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