Adiabatic passage with spin locking in Tm<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msup><mml:mrow /><mml:mrow><mml:mn>3</mml:mn><mml:mo>+</mml:mo></mml:mrow></mml:msup></mml:math>:YAG

Pascual-Winter, M. F.; Tongning, Robert-Christopher; Lauro, R.; Louchet-Chauvet, Anne; Chanelière, Thierry; Gouët, J.-L. Le

doi:10.1103/physrevb.86.064301

Cited by 15 publications

(12 citation statements)

References 39 publications

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“…We tried different pump pulse energies from 35 nJ to 360 nJ at both 79 K and 296 K to assess the dependence of phonon lifetime on the number density of excited carriers as mentioned by other authors. 30 In agreement with our previous observations, 24 we could not detect any change as a function of excitation energy. Hence phonon relaxation due to interaction with excited carriers does not appear to play a significant role in our measurements.…”

Section: Data Interpretation and Resultssupporting

confidence: 92%

Intrinsic to extrinsic phonon lifetime transition in a GaAs–AlAs superlattice

Hofmann

Garg

Maznev

et al. 2013

J. Phys.: Condens. Matter

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We have measured the lifetimes of two zone-center longitudinal acoustic phonon modes, at 320 and 640 GHz, in a 14 nm GaAs/2 nm AlAs superlattice structure. By comparing measurements at 296 and 79 K we separate the intrinsic contribution to phonon lifetime determined by phonon-phonon scattering from the extrinsic contribution due to defects and interface roughness. At 296 K, the 320 GHz phonon lifetime has approximately equal contributions from intrinsic and extrinsic scattering, whilst at 640 GHz it is dominated by extrinsic effects. These measurements are compared with intrinsic and extrinsic scattering rates in the superlattice obtained from first-principles lattice dynamics calculations. The calculated room-temperature intrinsic lifetime of longitudinal phonons at 320 GHz is in agreement with the experimentally measured value of 0.9 ns. The model correctly predicts the transition from predominantly intrinsic to predominantly extrinsic scattering; however the predicted transition occurs at higher frequencies. Our analysis indicates that the 'interfacial atomic disorder' model is not entirely adequate and that the observed frequency dependence of the extrinsic scattering rate is likely to be determined by a finite correlation length of interface roughness.

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Section: Data Interpretation and Resultssupporting

confidence: 92%

Intrinsic to extrinsic phonon lifetime transition in a GaAs–AlAs superlattice

Hofmann

Garg

Maznev

et al. 2013

J. Phys.: Condens. Matter

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“…This value of γ is actually close to the one that we expect in the case of spectral diffusion governed by an Ornstein-Uhlenbeck (OU) process [38], for which γ OU = 2/3 [43,44,45]. In this model, the detuning of each spin diffuses in a Markovian fashion within a characteristic time τ c into a Gaussian steady state distribution of spectral width σ, leading to a dephasing rate of ‡ [40]:…”

Section: °Fsupporting

confidence: 73%

“…The non-exponential shape of the efficiency curve shown in figure 4 indicates decoherence due to spectral diffusion [38,39] that might be mitigated by DD techniques [28,29,40,41,42]. To demonstrate that DD can indeed extend the coherence time we performed storage experiments with increasing number of sequences n s = 1, 2, 4, 8 while maintaining n p = 2 (the global number of pulses is then n = 2, 4, 8, 16).…”

Section: °Fmentioning

confidence: 99%

Optical storage for 0.53 s in a solid-state atomic frequency comb memory using dynamical decoupling

Holzäpfel¹,

Etesse²,

Kaczmarek³

et al. 2020

New J. Phys.

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Quantum memories with long storage times are key elements in longdistance quantum networks. The atomic frequency comb (AFC) memory in particular has shown great promise to fulfill this role, having demonstrated multimode capacity and spin-photon quantum correlations. However, the memory storage times have sofar been limited to about one millisecond, realized in a Eu 3+ doped Y 2 SiO 5 crystal in a configuration without any applied external magnetic field. Here we present a AFC spin-wave memory in a specific magnetic field configuration, which allows us to increase the spin-wave storage time to 40 ms using a simple spin-echo sequence. Furthermore, by applying dynamical decoupling techniques the spin-wave coherence time reaches 530 ms, a 300-fold increase with respect to previous AFC spin-wave storage experiments. This result paves the way towards long duration storage of quantum information in solid-state ensemble memories.

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“…This is illustrated in Fig. 3(b) showing similar decay dynamics at two different excitation pulse energies, 57 nJ and 171 nJ, for measurements at 79 K. Consequently, interaction with the excited electrons which 8 was suggested as a coherent phonon relaxation mechanism 23 does not play a significant role in our case.…”

supporting

confidence: 58%

Lifetime of sub-THz coherent acoustic phonons in a GaAs-AlAs superlattice

Maznev

Hofmann

Jandl

et al. 2013

Applied Physics Letters

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We measure the lifetime of the zone-center 340 GHz longitudinal phonon mode in a GaAs-AlAs superlattice excited and probed with femtosecond laser pulses. By comparing measurements conducted at room temperature and liquid nitrogen temperature we separate the intrinsic (phonon-phonon scattering) and extrinsic contributions to phonon relaxation. The estimated room temperature intrinsic lifetime of 0.95 ns is compared to available calculations and experimental data for bulk GaAs. We conclude that ~0.3 THz phonons are in the transition zone between Akhiezer and Landau-Rumer regimes of phonon-phonon relaxation at room temperature.

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Adiabatic passage with spin locking in Tm3+:YAG

Cited by 15 publications

References 39 publications

Intrinsic to extrinsic phonon lifetime transition in a GaAs–AlAs superlattice

Intrinsic to extrinsic phonon lifetime transition in a GaAs–AlAs superlattice

Optical storage for 0.53 s in a solid-state atomic frequency comb memory using dynamical decoupling

Lifetime of sub-THz coherent acoustic phonons in a GaAs-AlAs superlattice

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