Adhesion to Zirconium Dioxide Used for Dental Reconstructions: Surface Conditioning Concepts, Challenges, and Future Prospects

Özcan, Mutlu; Volpato, Cláudıa Ângela Mazıero

doi:10.1007/s40496-015-0071-x

Cited by 5 publications

(1 citation statement)

References 49 publications

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“…Nowadays, the reduction of energetic costs is a global issue in many areas. In the field of building construction or car production, the development of low-emissivity (low-e) glasses that reflect infrared ( i.e ., heat) and ultraviolet light is a major path to control heating and improve comfort in habitable spaces. , Low-e glasses rely on multilayered architectures incorporating silver in contact with various metal oxides (typically ZnO, TiO 2 , SnO 2 ). − Among all of these oxides, zirconia (ZrO 2 ) is another material of interest that is widely used in a large range of technical and biomedical applications − due to its good mechanical properties, in particular its high strength and fracture toughness. , This has already motivated many works focusing on the adhesion of zirconia on various metals such as Ni, Cu, or Pt . As a result, ZrO 2 could also prove to be a material of choice in low-emissivity glasses.…”

Section: Introductionmentioning

confidence: 99%

Enhanced Adhesion Energy at Oxide/Ag Interfaces for Low-Emissivity Glasses: Theoretical Insight into Doping and Vacancy Effects

Cornil

Rivolta

Mercier

et al. 2020

ACS Appl. Mater. Interfaces

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Low-emissivity glasses rely on multistacked architectures with a thin silver layer sandwiched between oxide layers. The mechanical stability of the silver/oxide interfaces is a critical parameter that must be maximized. Here, we demonstrate by means of quantum-chemical calculations that a low work of adhesion at interfaces can be significantly increased via doping and by introducing vacancies in the oxide layer. For the sake of illustration, we focus on the ZrO2(111)/Ag(111) interface exhibiting a poor adhesion in the pristine state and quantify the impact of introducing n-type dopants or p-type dopants in ZrO2 and vacancies in oxygen atoms (nVO; with n = 1, 2, 4, 8, 10, 16), zirconium atoms (mVZr; with m = 1, 2, 4, 8), or both (nVO + mVZr; with m/n = 1:2, 1:4, 2:2, 2:4). In the case of doping, interfacial electron transfer promotes an increase in the work of adhesion, from initially 0.16 to ∼0.8 J m–2 (n-type) and ∼2.0 J m–2 (p-type) at 10% doping. A similar increase in the work of adhesion is obtained by introducing vacancies, e.g., VO [VZr] in the oxide layer yields a work of adhesion of ∼1.5–2.0 J m–2 at 10% vacancies. An increase is also observed when mixing VO and VZr vacancies in a nonstoichiometric ratio (nVO + mVZr; with 2n ≠ m), while a stoichiometric ratio of VO and VZr has no impact on the interfacial properties.

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