1994
DOI: 10.1016/0167-9317(94)90142-2
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Adhesion problems in deep-etch x-ray lithography caused by fluorescence radiation from the plating base

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Cited by 32 publications
(16 citation statements)
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“…Note that these thicknesses are significantly smaller than those in Figure 4 because a dissolution rate of 0.1 pm/h at 21 "C corresponds to an interface dose of 1.2 kJ/cm3 for cross-linked PMMA (about 900 J/cm3 for linear PMMA). While such a dose seems extremely large in view of the work by Schmidt et al [8], it is nevertheless similar to the acceptable doses determined by Pantenburg et al for the exposure of thin 20 pm resists used in making masks [4]. Their values .…”
mentioning
confidence: 52%
See 1 more Smart Citation
“…Note that these thicknesses are significantly smaller than those in Figure 4 because a dissolution rate of 0.1 pm/h at 21 "C corresponds to an interface dose of 1.2 kJ/cm3 for cross-linked PMMA (about 900 J/cm3 for linear PMMA). While such a dose seems extremely large in view of the work by Schmidt et al [8], it is nevertheless similar to the acceptable doses determined by Pantenburg et al for the exposure of thin 20 pm resists used in making masks [4]. Their values .…”
mentioning
confidence: 52%
“…Using theoretical and experimental means, Pantenburg et al demonstrated that doses in the resist adjacent to the substrate and the associated loss of features were strongly dependent on the x-ray critical energy when the substrate and absorber thickness are fixed [4] and that adhesion can be improved significantly by increasing absorber thickness [8]. Schmidt et al similarly demonstrated that adhesion depends strongly on the substrate material for fixed absorber thickness and fixed x-ray energy [5].…”
Section: Past Researchmentioning
confidence: 92%
“…As described by Pantenburg et al [6], the adhesion can be greatly reduced by electrons and fluorescence photons that are created during the irradiation beneath the mask absorber. X-ray absorption by the metallic plating base results in substrate-generated photoelectrons being absorbed in the resist near the substrate.…”
Section: Introductionmentioning
confidence: 94%
“…Metal-coated silicon wafers are usually used as a primary substrate. The high conductivity of the metal layer makes the wafer suitable as an electroplating base, but the secondary radiation generated during the higher energy exposure of DXRL can lead to adhesion failure [1]. Adhesion buffer layers have been used to reduce adhesion failure [2], but they complicate processing and can be difficult to remove.…”
Section: Introductionmentioning
confidence: 99%