Adhesion in growth of defect-free silicon over silicon oxide

Abstract

By applying liquid phase epitaxy, we have grown defect-free silicon and silicon–germanium layers on partially oxide-masked Si wafers. The growth of the layers started epitaxially in oxide-free seeding areas and proceeded laterally over the thermal oxide film. Detailed studies by x-ray topography and electron microscopy show that the obtained thin semiconductor-on-insulator layers bend towards the oxide during lateral growth. The bending of the layers can be ascribed to adhesion and interfacial forces. Adhesion operates across a gap between the closely spaced surfaces of the oxide and the epitaxial Si and facilitates lateral growth of high-quality semiconductor layers on dissimilar layers or substrates. The technical potential of adhesion-dependent solution growth on dissimilar substrates is discussed.

Epitaxial Lateral Overgrowth - a Tool for Dislocation Blockade in Multilayer Systems

“…5b). The similar microscopic bending was recently reported for Si ELO lamellae grown by LPE upon thermally oxidised silicon substrates [21]. The forces resulting from the surface tension of the solution as well as the van der Waals forces attracting the closely spaced surfaces of the ELO and the SiO2 fllm were suggested as the possible sources of the bending.…”

Recent progress in lateral overgrowth of semiconductor structures from the liquid phase

“…Sidewall of the layer beginning to grow laterally is strongly curved, and, due to the Gibbs-Thomson effect, it requires higher equilibrium solute concentration than the planar face. Thus, instead of growing laterally the layer is dissolved and cannot get out from the opening in the mask as long as the liquid phase is not supersaturated sufficiently [20]. Situation is different if dislocations enhancing vertical ELO growth are present in the substrate.…”

Spatially Resolved X-ray Diffraction Technique for Crystallographic Quality Inspection of Semiconductor Microstructures

“…2b relative to the ω = ω 0 line. Downward tilt of lattice planes, being due to an interaction between ELO wings and the mask, is a well known phenomenon commonly observed in various ELO systems, including ELO layers of GaAs [2] and Si [6] grown by LPE as well as GaN ELO layers grown by metalorganic vapor phase epitaxy [7]. When studied by standard wide beam X-ray diffraction the effect manifests itself by broadening of X-ray rocking curve measured with the axis parallel to the seeding line (see Fig.…”