Adhesion-free growth of AlSb bulk crystals in silica crucibles

Pino, Robinson E.; Ko, Youngok; Dutta, P.S.

doi:10.1016/j.jcrysgro.2005.05.084

Cited by 15 publications

(6 citation statements)

References 24 publications

(39 reference statements)

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“…The cyclic voltammogram in Figure exhibits a pronounced reduction peak at −1.1 V that we provisionally assigned to the formation of the AlSb compound. Thermodynamically this is a very stable compound with a high melting point of 1058 °C . Results of STM and STS measurements in this potential range are shown in Figure .…”

Section: Resultsmentioning

confidence: 92%

“…The electrochemical fabrication of compound semiconductors is still a challenging topic. Within the family of III−V compound semiconductors, the binary semiconductor AlSb shows promise as a highly efficient solar cell material .…”

Section: Introductionmentioning

confidence: 99%

“…Within the family of III−V compound semiconductors, the binary semiconductor AlSb shows promise as a highly efficient solar cell material . Its band structure, calculated by the LCAO method in the local density approximation, exhibits a direct gap of 2.5 eV and an indirect gap of 1.2 eV, the corresponding experimental values being 2.4 and 1.8 eV, respectively …”

Section: Introductionmentioning

confidence: 99%

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Microscopic and Electronic Structure of Semimetallic Sb and Semiconducting AlSb Fabricated by Nanoscale Electrodeposition: An in Situ Scanning Probe Investigation

Mann

Freyland

2006

J. Phys. Chem. B

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The nanoscale electrocrystallization of pure Sb and the compound semiconductor AlSb on Au(111) has been studied by in situ scanning probe techniques (STM and STS) employing an ionic liquid electrolyte, {AlCl3-[C4mim]+Cl-} (1:1) containing SbCl3. The characteristic changes of the electronic structures with varying potentials have been probed for the first time by normalized differential conductance spectra, (dI/dU)/(I/U). In the underpotential deposition range of Sb the formation of two layers is observed. For the first monolayer a (square root 3 x square root 3)R30 degrees structure is determined from atomically resolved STM images. During the deposition and dissolution of the Sb monolayers characteristic wormlike or spinodal structures appear indicating surface alloying of antimony with the gold substrate. Under overpotential conditions two different Sb structures have been observed. If the deposition potential is continuously stepped to -0.1 V, Sb nanostripes form. On the other hand, randomly dispersed small clusters occur if the potential is jumped from 0.0 to -0.3 V vs Al/Al(III). Both modifications exhibit typical semimetallic behavior as shown by the STS spectra. At -1.1 V the cyclic voltammogram shows a clear reduction wave that is assigned to AlSb compound formation. Deposits in this potential range are characterized by a homogeneous distribution of clusters with diameters of approximately 20 nm. Conductance spectra of these clusters exhibit the main features of the electronic structure of the bulk semiconductor AlSb, with a band gap of 2.0 +/- 0.2 eV. Electrodeposition experiments on both sides of the compound deposition potential show a strong doping effect that is manifest in the corresponding conductance spectra.

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Section: Resultsmentioning

confidence: 92%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Microscopic and Electronic Structure of Semimetallic Sb and Semiconducting AlSb Fabricated by Nanoscale Electrodeposition: An in Situ Scanning Probe Investigation

Mann

Freyland

2006

J. Phys. Chem. B

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“…The fully encapsulated crystal growth techniques using B 2 O 3 and LiCl-KCl as the liquid encapsulants have been applied to the synthesis of AlSb and CdZnTe and neither sticking to crucible materials nor material decomposition has been observed. [18][19][20] Another reason for the difficulty in synthesizing Mg 2 Si from the melt is that the melting point of Mg 2 Si (1085 °C) is close to the boiling point of Mg (1090 °C), which may cause a chemical explosion. This can be avoided by using a eutectic reaction of Mg-Si alloy at 637.6 °C, 20) which leads to the formation of a liquid Mg-Si alloy by heating a mixture of Si and Mg powders well below the melting point of Mg 2 Si (1085 °C).…”

Section: Introductionmentioning

confidence: 99%

Synthesis and crystal growth of Mg₂Si by the liquid encapsulated vertical gradient freezing method

Nakagawa¹,

Katsumata²,

Hashimoto³

et al. 2015

Jpn. J. Appl. Phys.

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The synthesis of Mg2Si bulk crystals was performed by the vertical gradient freezing method using a KCl–MgCl2 eutectic liquid encapsulant. Stoichiometric polycrystalline Mg2Si bulk crystals were successfully grown by changing the composition ratio of starting Mg and Si powders (Mg/Si) from 2.0 to 3.5. A chemical reaction between Mg2Si and the crucible materials was inhibited using encapsulant materials, and the contamination by K or Cl originating from the encapsulant materials was not detected in almost all the samples. However, Mg evaporation could not be prevented completely during the synthesis and crystal growth. The optical band-gap energy of Mg2Si bulk crystals became minimal (0.79 eV) at a Mg/Si ratio of 2.5, at which the maximum electron mobility of 202 cm2·V−1·s−1 was obtained. These results indicate that the composition ratio of Mg/Si = 2.5 for starting Mg and Si powders was optimal for synthesizing Mg2Si bulk crystals with high crystalline quality.

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“…Although bulk material [10,11] and quantum dots [12] of III-antimonides have been successfully synthesized, reports of synthesis of III-antimonide nanowires have been scarce at best. GaSb nanowires have been synthesized via Au 4 Author to whom any correspondence should be addressed.…”

Section: Introductionmentioning

confidence: 99%

Self-nucleation and growth of group III-antimonide nanowires

Pendyala

Vaddiraju

Kim

et al. 2010

Semicond. Sci. Technol.

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In this paper, we show that the growth of III-antimonides can occur via self-catalysis using either group III metal or Sb clusters at their tips. Specific experiments using GaSb and InSb systems show that bulk nucleation and growth of the respective antimonide wires can also occur from mm-sized droplets. The role of equilibrium solubility and the size of the droplet on bulk nucleation versus tip-led growth is discussed.

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Adhesion-free growth of AlSb bulk crystals in silica crucibles

Cited by 15 publications

References 24 publications

Microscopic and Electronic Structure of Semimetallic Sb and Semiconducting AlSb Fabricated by Nanoscale Electrodeposition: An in Situ Scanning Probe Investigation

Microscopic and Electronic Structure of Semimetallic Sb and Semiconducting AlSb Fabricated by Nanoscale Electrodeposition: An in Situ Scanning Probe Investigation

Synthesis and crystal growth of Mg₂Si by the liquid encapsulated vertical gradient freezing method

Self-nucleation and growth of group III-antimonide nanowires

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Adhesion-free growth of AlSb bulk crystals in silica crucibles

Cited by 15 publications

References 24 publications

Microscopic and Electronic Structure of Semimetallic Sb and Semiconducting AlSb Fabricated by Nanoscale Electrodeposition: An in Situ Scanning Probe Investigation

Microscopic and Electronic Structure of Semimetallic Sb and Semiconducting AlSb Fabricated by Nanoscale Electrodeposition: An in Situ Scanning Probe Investigation

Synthesis and crystal growth of Mg2Si by the liquid encapsulated vertical gradient freezing method

Self-nucleation and growth of group III-antimonide nanowires

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Synthesis and crystal growth of Mg₂Si by the liquid encapsulated vertical gradient freezing method