ADFET-a simple inexpensive power device

Analysis of Radiation-Induced Defects and Performance Conditioning in High-Power Devices

“…In the field of high-power switching devices such as insulated gate bipolar transistors ͑IGBTs͒ or thyristors, light ion irradiation is an efficient means of adjusting the charge carrier distribution by vertical or/and lateral reduction of the charge carrier lifetime in order to improve the turn-off behavior while keeping the on-state losses low. 1,2 Often a combination of electron and light ion irradiation proves to be advantageous. 3,4 In p-i-n diodes lifetime profiles with a double peak are useful to effect a soft reverse recovery and to efficiently suppress dynamic avalanche.…”

Irradiation-Induced Deep Levels in Silicon for Power Device Tailoring

“…In high-power switching devices such as IGBTs and GTO thyristors, irradiation with light ions is used for a local reduction of the carrier lifetime to improve the turn-off behavior while still maintaining low on-state losses. 1,2 For creating fast-switching FWDs, the combination of electron and light-ion irradiation as well as light-ion irradiation with two different energies creating two areas with reduced carrier lifetime has been shown to be beneficial for soft reverse recovery behavior. 3,4 Apart from controlling the local carrier lifetime, light-ion radiation can also be applied to modify the doping profile of silicon devices.…”