Adducing crystalline features from Raman scattering studies of cubic SiC using different excitation wavelengths

Chen, Shuai; Wan, Lingyu; Xie, Deng; Qiu, Zhi Ren; Jiang, Xiaodong; Tin, C. C.; Feng, Zhe Chuan

doi:10.1088/1361-6463/aa5626

Cited by 8 publications

(1 citation statement)

References 20 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The phonon correlation length L is used to measure the average distance between point defects (Ferreira et al, 2010) to describe the crystal quality (Havel et al, 2004). The intensity of the first-order Raman spectrum I(ω) can be deduced from the spatial correlation model of the Gaussian distribution function as (Chuan, 2000;Ferreira et al, 2010;Havel et al, 2004;Chen et al, 2017):…”

Section: Analysis Of the Spatial Correlation Theorymentioning

confidence: 99%

Temperature-Dependent Properties of Graphene on SiC Substrates for Triboelectric Nanogenerators

Wang

Wan

et al. 2022

Front. Mater.

Self Cite

View full text Add to dashboard Cite

Graphene has excellent properties such as ultra-high electrical conductivity, high carrier mobility, and thermal conductivity, with a promising application in the field of triboelectric nanogenerators (TENGs). We present a systemic investigation to explore structural, optical, and temperature-dependent properties of single- and bi-layer graphene on SiC substrates, prepared by the decomposition of SiC and transferred substrate methods and their applications in TENGs. Compared to the transferred graphene onto a SiC substrate, graphene grown by the decomposition of SiC has a better crystalline quality and surface morphology, fewer impurities, and a more stress effect between graphene and the substrate. It also exhibited a longer correlation length of Raman phonons, implying better crystalline perfection. With the increase in temperature, the phonon correlation length, L, increases synchronously with TENG outputs. Among them, the TENG with a bi-layer graphene grown by the decomposition of SiC showed the best performance, especially at high temperatures. These studies provide an essential reference for further applications of graphene on SiC substrates in TENG-based devices.

show abstract