Additive Processes for Piezoelectric Materials: Piezoelectric MEMS

Polcawich, Ronald G.; Pulskamp, Jeffrey S.

doi:10.1007/978-0-387-47318-5_5

Cited by 28 publications

(11 citation statements)

References 148 publications

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“…L EAD zirconate titanate (PZT) thin films are useful in a number of applications, including microelectromechanical systems (MEMS) and decoupling capacitors. [1][2][3][4] PZT compositions near the morphotropic phase boundary (MPB, Zr/ Ti = 52/48) are widely used because these compositions exhibit higher piezoelectric coefficients than those further from the MPB. 5 Texture is an important feature of thin films and is defined as a nonrandom distribution of crystallographic orientations.…”

Section: Introductionmentioning

confidence: 99%

Phase and Texture Evolution in Chemically Derived PZT Thin Films on Pt Substrates

et al. 2014

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The crystallization of lead zirconate titanate (PZT) thin films was evaluated on two different platinum‐coated Si substrates. One substrate consisted of a Pt coating on a Ti adhesion layer, whereas the other consisted of a Pt coating on a TiO2 adhesion layer. The Pt deposited on TiO2 exhibited a higher degree of preferred orientation than the Pt deposited on Ti (as measured by the Full Width at Half Maximum of the 111 peak about the sample normal). PZT thin films with a nominal Zr/Ti ratio of 52/48 were deposited on the substrates using the inverted mixing order (IMO) route. Phase and texture evolution of the thin films were monitored during crystallization using in situ X‐ray diffraction at a synchrotron source. The intensity of the Pt3Pb phase indicated that deposition on a highly oriented Pt/TiO2 substrate resulted in less diffusion of Pb into the substrate relative to films deposited on Pt/Ti. There was also no evidence of the pyrochlore phase influencing texture evolution. The results suggest that PZT nucleates directly on Pt, which explains the observation of a more highly oriented 111 texture of PZT on the Pt/TiO2 substrate than on the Pt/Ti substrate.

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Section: Introductionmentioning

confidence: 99%

Phase and Texture Evolution in Chemically Derived PZT Thin Films on Pt Substrates

et al. 2014

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“…Hal inilah yang mengakibatkan penurunan terhadap laju etching secara fisis. RIE terjadi dalam tiga tahapan, yaitu adsorpsi dan kemisorpsi, reaksi, dan desorpsi [7]. Proses adsorbsi dan kemisorpsi terjadi ketika atom reaktan menempel pada permukaan sampel.…”

Section: Gambar 5 Penurunan Mean Free Path Terhadap Laju Alir Gas Taunclassified

Ch2FCF3 Gas Flow Rate Effects of SiO2 Plasma Etching Rate on Quartz Crystal Microbalance

Permana

Masruroh

2016

Nat-B

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ABSTRAKTelah dilakukan penelitian pengaruh laju alir gas pada proses plasma etching di atas permukaan kristal SiO2. Proses plasma etching SiO2 dilakukan dengan menggunakan reaktor plasma model capacitively coupled plasma (CCP). Plasma dibangkitkan dengan daya 100 W menggunakan generator AC berfrekuensi rendah dengan menggunakan gas CH2FCF3. Tujuan dari penelitian ini adalah untuk mempelajari pengaruh dari perubahan aliran gas terhadap laju etching pada permukaan SiO2. Laju alir yang digunakan pada rentang 20 -40 mL/min di mana parameter lainnya dibuat tetap. Profil permukaan SiO2 yang teretching dianalisa menggunakan white-light profilometer (Topography Measurement System (TMS 1200 Micro Lab)). Hasil penelitian menunjukkan proses etching pada permukaan SiO2 dipengaruhi oleh mekanisme secara fisis dan reactive ion etching (RIE) di mana pada laju aliran gas rendah mekanisme secara fisis lebih dominan sedangkan pada laju aliran gas tinggi dipengaruhi oleh mekanisme RIE. Laju etching maksimum yang diperoleh 7,753 nm/min dicapai pada proses plasma etching.Kata Kunci: plasma etching; laju etching; RIE; QCM ABSTRACT Effect of gas flow rate on the surface of quartz crystal SiO2 during plasma etching was studied. The etching process was applied using the capacitively coupled plasma (CCP) reactor generated with 100 W power AC generator at low frequency of 40 kHz using a gas flow of CH2FCF3. The main objective of this study was to determine the effect of changing gas flow rate on the plasma etching rate on the SiO2 surfaces. Gas flow rate was varied between 20-40 mL/min, while keeping all other plasma parameters constant. The etched surface of SiO2 was analyzed using white-light profilometer (Topography Measurement System (TMS 1200 Micro Lab)). The results show the physical etching processes influenced the rate of etching at a low gas flow rate, while the higher flow rate influence reactive ion etching (RIE) in the etching process. The maximum etching rate is found at 7.753 nm / min achieved in plasma etching process.

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“…This force acts about the flexure NA of the composite structure to generate the bending moment, M p , described by (10). In (10), w is the width of the actuated cantilever, V is the applied voltage, e 31,eff is the effective electro-active stress constant of the piezoelectric [28], and h is the moment arm:…”

Section: Modal Forcementioning

confidence: 99%

Nano- and micro-electromechanical switch dynamics

Pulskamp

Proie

Polcawich

2013

J. Micromech. Microeng.

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This paper reports theoretical analysis and experimental results on the dynamics of piezoelectric MEMS mechanical logic relays. The multiple degree of freedom analytical model, based on modal decomposition, utilizes modal parameters obtained from finite element analysis and an analytical model of piezoelectric actuation. The model accounts for exact device geometry, damping, drive waveform variables, and high electric field piezoelectric nonlinearity. The piezoelectrically excited modal force is calculated directly and provides insight into design optimization for switching speed. The model accurately predicts the propagation delay dependence on actuation voltage of mechanically distinct relay designs. The model explains the observed discrepancies in switching speed of these devices relative to single degree of freedom switching speed models and suggests the strong potential for improved switching speed performance in relays designed for mechanical logic and RF circuits through the exploitation of higher order vibrational modes.

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Additive Processes for Piezoelectric Materials: Piezoelectric MEMS

Cited by 28 publications

References 148 publications

Phase and Texture Evolution in Chemically Derived PZT Thin Films on Pt Substrates

Phase and Texture Evolution in Chemically Derived PZT Thin Films on Pt Substrates

Ch2FCF3 Gas Flow Rate Effects of SiO2 Plasma Etching Rate on Quartz Crystal Microbalance

Nano- and micro-electromechanical switch dynamics

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