Additive encoding low-density parity-check (AE-LDPC) codes for two-dimensional magnetic recording (TDMR)

Hwang, Euiseok; Negi, Rohit; Kumar, B. V. K. Vijaya

doi:10.1109/iccnc.2012.6167469

Cited by 4 publications

(3 citation statements)

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“…However, the proposed scheme can be combined with additive encoding LDPC codes. After obtaining the defect information corresponding to the ICI by the proposed scheme, this defect information can be incorporated by additive encoding LDPC codes [25], [26]. In the two-dimensional magnetic recording (TDMR) channel where the soft decision value is obtained without the read speed degradation, [26] shows that additive encoding LDPC codes with defect information corresponding to the channel state of TDMR improve the decoding failure probability.…”

Section: Simulation Resultsmentioning

confidence: 99%

“…The partitioned Bose-Chaudhuri-Hocquenghem (PBCH) codes can be designed by the construction of BCH codes [29]. Also, PLBC includes additive encoding LDPC codes which combine additive encoding and LDPC decoding [25], [26].…”

Section: Coding For Memory With Defective Cellsmentioning

confidence: 99%

“…Thus, the proposed scheme using side information at the encoder would be preferable over soft decision decoding from the perspective of speed performance. It is worth mentioning that the proposed scheme can be combined with LDPC codes using the technique of additive encoding LDPC codes [25], [26] if we are willing to accept the degradation of read speed.…”

Section: Introductionmentioning

confidence: 99%

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Writing on dirty flash memory: Combating inter-cell interference via coding with side information

2022

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High-density flash memories suffer from inter-cell interference (ICI) which threatens the reliability of stored data. In order to cope with the ICI problem, we propose a channel coding scheme with channel state information of flash memories (i.e., side information of ICI). This side information is obtained before writing data into flash memories and incorporated during the encoding stage. We show that flash memories under ICI problem can be transformed into the model of memory with defective cells due to the unique asymmetry property between write (page write) and erase (block erase) operations. Then, the channel coding for memory with defective cells is employed to combat ICI. Simulation results support that the proposed scheme with the ICI side information can effectively improve the decoding failure probability.

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Section: Simulation Resultsmentioning

confidence: 99%

Section: Coding For Memory With Defective Cellsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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