Additive Effect of Poly(4-vinylphenol) Gate Dielectric in Organic Thin Film Transistor at Low Temperature Process

Yun, Ho‐Jin; Baek, Kyu‐Ha; Do, Lee‐Mi; Jeong, Kwang‐Seok; Kim, Yumi; Yang, Seung‐Dong; Lee, Sang-Youl; Lee, Hi‐Deok; Lee, Ga‐Won

doi:10.1166/jnn.2013.7272

Cited by 9 publications

(6 citation statements)

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“…These values are typical for high-k cross-linked organic dielectrics [33,34]. Devices from a 1:5 ratio featured a higher dielectric constant, but also higher leakage currents, which are a sign of enhanced cross-linking [1,34]. In the absence of cross-linking, photolithography of electrodes tends to damage the dielectric film.…”

Section: Electrical Characterization Of Capacitorsmentioning

confidence: 89%

“…Organic electronic devices benefit from optical transparency, mechanical flexibility, large area and potential lowcost processing [1]. A bottom-gate/bottom-contact organic thin-film transistor structure as shown in Fig.…”

Section: Introductionmentioning

confidence: 99%

“…Processing on top of an organic gate dielectric film in bottom gate structures requires, however, cross-linking of polymer chains [8]. OTFTs from PVP blended to poly(melamine-coformaldehyde) methylated (PMF) have been demonstrated in the past decades [1,6,8]. Nevertheless, it is not clear if films from higher concentrations of the cross-linker agent provide better field-effect devices with photopatterned electrodes.…”

Section: Introductionmentioning

confidence: 99%

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Organic Dielectric Films for Flexible Transistors as Gas Sensors

García

Izquierdo

Nogueira

et al. 2020

JICS

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Cross-linked polymer films with poly(melamine-co-formaldehyde) methylated (PMF) were investigated in order to integrate flexible organic transistor-based sensors. By blending poly(methyl methacrylate) (PMMA) with PMF, solutions showed reduced viscosity for wet processing. Thin-films from poly (4-vinylphenol) (PVP) blends with PMF featured lower RMS roughness (0.37 nm) and higher dielectric constant (k ~ 3.7 – 5.7). The presence of enhanced cross-linking at higher PMF concentrations was confirmed for both polymers from chemical resistance essays and structural characterization.

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Section: Electrical Characterization Of Capacitorsmentioning

confidence: 89%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Organic Dielectric Films for Flexible Transistors as Gas Sensors

García

Izquierdo

Nogueira

et al. 2020

JICS

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“…A hydrophobic SAM or buffer organic layer should be able to passivate the -OH groups and, at the same time, decrease water diffusion to the PVP:PMF thin-film [2,25,26,48,54,55]. Increasing the concentration of the crosslinking agent is another possible strategy to decrease the hydroxyl concentration [27,56,57].…”

Section: B Current Versus Voltage Shifts Under Stressmentioning

confidence: 99%

Bias Stress in Organic Thin-Film Transistors Towards Low-Cost Flexible Gas Sensors

Izquierdo

Oliveira

Nogueira

et al. 2021

JICS

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This work is focused on the bias stress (BS) effects in Organic Thin-Film Transistors (OTFTs) from poly(2,5-bis(3-alkylthiophen-2-yl)thieno[3,2-b]thiophene) (PBTTT-C14) on both highly-doped Si and glass substrates. While the former had a thermally-grown SiO2 dielectric, the latter demanded an alternative dielectric that should be capable to withstand bottom contact lithography, as well as semiconducting thin-film deposition. In addition, it should represent one more step towards flexible electronics. In order to do that, poly(4-vinylphenol) (PVP) was blended to poly(melamine-co-formaldehyde) methylated (PMF). OTFTs on glass with a cross-linked polymer dielectric had a charge carrier mobility (μ) of 4.0x10-4 cm2/Vs, threshold voltage (VT) of 18 V, current modulation (ION/OFF) higher than 1x102, and subthreshold slope (SS) of -7.7 V/dec. A negative BS shifted VT towards negative values and produced an increase in ION/OFF. A positive BS, on the other hand, produced the opposite effect only for OTFTs on Si. This is believed to be due to a higher trapping at the PVP:PMF interface with PBTTT-C14. Modeling the device current along time by a stretched exponential provided shorter time constants of ca. 105 s and higher exponents of 0.7–0.9 for devices on glass. Due to the presence of increased BS effects, the application of organic TFTs based on PVP:PMF as flexible sensors will require compensating circuits, lower voltages or less measurements in time. Alternatively, BS effects could be reduced by a dielectric surface treatment.

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“…Observa-se uma alta constante dielétrica (4,7 até 5,2), característica dos filmes dielétricos orgânicos reticulados, devido ao efeito de rede que a reticulação cria na estrutura química do filme[52,65]. Os filmes de PVP:PMF de proporção 1:1 apresentaram valores mais baixos de corrente de fuga com respeito aos filmes de PVP:PMF 1:5, mas isso pode ser explicado pela concentração maior de PMF nos filmes na proporção 1:5[65,66]. No entanto os filmes de PVP:PMF 1:5 têm tensão de ruptura maior, validando os estudos da morfologia do filme em que se demonstrou que eram mais resistentes que os de menor proporção.Os valores de densidade de capacitância encontrados na literatura variam de 2-40 nF/cm 2[65] dependendo das concentrações e proporções de PVP e PMF.…”

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Estudo de camadas orgânicas para utilização em transistores em substratos rígidos e flexíveis.

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Este projeto consiste na fabricação e caracterização de filmes poliméricos, como isolantes de porta, em transistores de filmes finos orgânicos (do inglês Organic Thin Film Transistor, OTFTs), com estrutura bottom-gate/bottom-contact. Foram utilizados vários materiais dielétricos orgânicos sem reticulação, poli(4-vinilfenol) (PVP), polimetilmetacrilato (PMMA) ou na forma de blenda com o agente reticulante poly(melamine-co-formaldehyde) methylated (PMF), com o intuito de aumentar a resistência química do filme contra a degradação por oxigênio e a corrosão por solvente orgânico.Foi necessário investigar o efeito da espessura e da reticulação nas propriedades do filme dielétrico para obter um dispositivo com parâmetros elétricos semelhantes aos encontrados na literatura, tais como: constante dielétrica (k), densidade de capacitância, densidade de corrente de fuga, tensão de limiar (VT), inclinação da região de sublimiar (SS), mobilidade dos portadores (μp) e relação entre as correntes ION/OFF. Foi feita a caracterização elétrica dos transistores fabricados, assim como análises morfológicas por espectroscopia Raman, FTIR e rugosidade. Com a finalidade de conhecer se o filme dielétrico de PVP ou PMMA suporta os processos de fabricação, foi analisado, tanto por AFM quanto por perfilometria, o que ocorre na espessura dos filmes obtidos após a corrosão por plasma e a deposição por centrifugação (do inglês spin coating) de diferentes solventes orgânicos sobre o filme dielétrico.

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Additive Effect of Poly(4-vinylphenol) Gate Dielectric in Organic Thin Film Transistor at Low Temperature Process

Cited by 9 publications

References 0 publications

Organic Dielectric Films for Flexible Transistors as Gas Sensors

Organic Dielectric Films for Flexible Transistors as Gas Sensors

Bias Stress in Organic Thin-Film Transistors Towards Low-Cost Flexible Gas Sensors

Estudo de camadas orgânicas para utilização em transistores em substratos rígidos e flexíveis.

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