Additional X-ray and electron diffraction peaks of polycrystalline silicon films

Hendriks, M.; Radelaar, S.; Beers, A.M.; Bloem, J.

doi:10.1016/0040-6090(84)90388-2

Cited by 38 publications

(20 citation statements)

References 28 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The latter reflection is a forbidden reflection for dc-Si in the kinematic approximation, but it appears because of the hexagonal stacking sequence around a stacking fault. 18 Attributing the extra reflection to hexagonal Si is consistent with the interpretation of Hendriks et al, 19 who analyzed films grown by low pressure chemical vapor deposition ͑LPCVD͒ in the temperature range between 560 and 1000°C. Hendriks et al 19 relate extra reflections in their x-ray diffractograms to polytypic series of diamond hexagonal silicon ͑dh-Si͒.…”

Section: A Grain Boundaries and Domain Structure In µC-si:h Crystallsupporting

confidence: 83%

“…18 Attributing the extra reflection to hexagonal Si is consistent with the interpretation of Hendriks et al, 19 who analyzed films grown by low pressure chemical vapor deposition ͑LPCVD͒ in the temperature range between 560 and 1000°C. Hendriks et al 19 relate extra reflections in their x-ray diffractograms to polytypic series of diamond hexagonal silicon ͑dh-Si͒. For these polytypic modifications, the ͕011 0͖ reflection in pure diamond hexagonal silicon ͑dh-Si͒ has the largest lattice spacing of 0.323 nm Ϫ1 , i.e., the smallest scattering vector qϭ3.007 nm.…”

Section: A Grain Boundaries and Domain Structure In µC-si:h Crystallsupporting

confidence: 83%

See 1 more Smart Citation

Microtwinning in microcrystalline silicon and its effect on grain-size measurements

2003

View full text Add to dashboard Cite

Microcrystalline silicon grown by plasma-enhanced chemical vapor deposition consists of a phase mixture of amorphous silicon and submicrometer sized columnar crystalline silicon grains. These grains do not exhibit perfect translational symmetry but show a high density of microtwins, evidenced by structural investigations by use of transmission electron microscopy and x-ray diffraction. The high twin fault density of typically every tenth ͕111͖ bilayer leads to anisotropic size broadening effects for Bragg reflection peaks. This anisotropic behavior of size broadening interferes with grain-size and strain measurements from x-ray diffractograms. Experimentally measured apparent grain sizes are up to a few ten nanometers and are subject to significant scatter due to the effect of microtwinning. Numerical modeling of the shape of Bragg reflection peaks is presented for the two characteristic modifications of microtwinning, i.e., lamellar and random twinning, to assess quantitatively the effect of microtwinning on size broadening and grain-size measurements from Bragg reflection width.

show abstract

Section: A Grain Boundaries and Domain Structure In µC-si:h Crystallsupporting

confidence: 83%

Section: A Grain Boundaries and Domain Structure In µC-si:h Crystallsupporting

confidence: 83%

Microtwinning in microcrystalline silicon and its effect on grain-size measurements

2003

View full text Add to dashboard Cite

show abstract

“…Hexagonal structures were also found in silicon and germanium thin films deposited by laser ablation 5,6 and recrystallized by an electron beam 7 . The existence of silicon polytypes was deduced using x-ray diffraction 8 , High Resolution Transmission Electron Microscopy (HRTEM) 9 and Raman studies 10 . In the TEM studies the polytypes appear as a sequence of stacking faults and twin defects, locally ordered on a few nanometers, but no long range order on tens of nanometers was demonstrated.…”

Section: Introductionmentioning

confidence: 99%

Hidden defects in silicon nanowires

et al. 2011

View full text Add to dashboard Cite

Recent publications have reported the presence of hexagonal phases in Si nanowires. Most of these reports were based on 'odd' diffraction patterns and HRTEM images , -'odd' means that these images and diffraction patterns could not be obtained on perfect silicon crystals in the classical diamond cubic structure. We analyze the origin of these 'odd' patterns and images by studying the case of various Si nanowires grown using either Ni or Au as catalyst in combination with P or Al doping. Two models could explain the experimental results : (i) the presence of an hexagonal phase or (ii) the presence of defects that we call 'hidden' defects because they cannot be directly observed on most images. We show that in many cases one direction of observation is not sufficient to distinguish between the two models. Several directions of observations have to be used. Secondly, conventional TEM images i.e. bright field two beam and dark field images, are of great value in the identification of 'hidden' defects. In addition, slices of nanowires perperpendicular to the growth axis can be very useful. In the studied nanowires no hexagonal phase with long range order is found and the 'odd' images and diffraction patterns are mostly due to planar defects causing superposition of different crystal grains. Finally, we show that in Raman experiments the defect rich NWs can give rise to a Raman peak shifted to 504-511 cm −1 with respect to the Si bulk peak at 520 cm −1 , indicating that Raman cannot be used to identify an hexagonal phase.

show abstract

“…Figure 1 shows the atomic structure of the relaxed WZ-Si and the corresponding band-structure. The cell parameters and band gap properties of WZ-Si obtained from the present work are listed in Table I, together with data reported in the literature [12,22,23,24]. The relaxed WZ-Si is an indirect band-gap semiconductor with a calculated band gap of 0.47 eV between the valence-band maximum (VBM) and the conduction-band minimum (CBM) at M, and a direct band gap of 1.02 eV at Γ, respectively.…”

Section: A Balanced Structure Of Wuzite-simentioning

confidence: 99%

Band Gap Engineering of Wurtzite Silicon by Uniaxial Pressure

Cui¹

2017

IJIRCST

View full text Add to dashboard Cite

Abstract-Electronic properties of wurtzite silicon (WZ-Si) are investigated by first-principle calculation. It is found that WZ-Si is an indirect band-gap semiconductor at ambient condition. A uniaxial strain along the c-direction can reduce the direct energy gap at Γ significantly. Calculated pressure needed to compress WZ-Si is not too high, which shows strained WZ-Si would be potential in practical use. The effective mass of electron is found strongly dependent on strain which could be used to tailor the transport properties.

show abstract

Additional X-ray and electron diffraction peaks of polycrystalline silicon films

Cited by 38 publications

References 28 publications

Microtwinning in microcrystalline silicon and its effect on grain-size measurements

Microtwinning in microcrystalline silicon and its effect on grain-size measurements

Hidden defects in silicon nanowires

Band Gap Engineering of Wurtzite Silicon by Uniaxial Pressure

Contact Info

Product

Resources

About