1984
DOI: 10.1016/0040-6090(84)90388-2
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Additional X-ray and electron diffraction peaks of polycrystalline silicon films

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Cited by 38 publications
(20 citation statements)
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“…The latter reflection is a forbidden reflection for dc-Si in the kinematic approximation, but it appears because of the hexagonal stacking sequence around a stacking fault. 18 Attributing the extra reflection to hexagonal Si is consistent with the interpretation of Hendriks et al, 19 who analyzed films grown by low pressure chemical vapor deposition ͑LPCVD͒ in the temperature range between 560 and 1000°C. Hendriks et al 19 relate extra reflections in their x-ray diffractograms to polytypic series of diamond hexagonal silicon ͑dh-Si͒.…”
Section: A Grain Boundaries and Domain Structure In µC-si:h Crystallsupporting
confidence: 83%
See 1 more Smart Citation
“…The latter reflection is a forbidden reflection for dc-Si in the kinematic approximation, but it appears because of the hexagonal stacking sequence around a stacking fault. 18 Attributing the extra reflection to hexagonal Si is consistent with the interpretation of Hendriks et al, 19 who analyzed films grown by low pressure chemical vapor deposition ͑LPCVD͒ in the temperature range between 560 and 1000°C. Hendriks et al 19 relate extra reflections in their x-ray diffractograms to polytypic series of diamond hexagonal silicon ͑dh-Si͒.…”
Section: A Grain Boundaries and Domain Structure In µC-si:h Crystallsupporting
confidence: 83%
“…18 Attributing the extra reflection to hexagonal Si is consistent with the interpretation of Hendriks et al, 19 who analyzed films grown by low pressure chemical vapor deposition ͑LPCVD͒ in the temperature range between 560 and 1000°C. Hendriks et al 19 relate extra reflections in their x-ray diffractograms to polytypic series of diamond hexagonal silicon ͑dh-Si͒. For these polytypic modifications, the ͕011 0͖ reflection in pure diamond hexagonal silicon ͑dh-Si͒ has the largest lattice spacing of 0.323 nm Ϫ1 , i.e., the smallest scattering vector qϭ3.007 nm.…”
Section: A Grain Boundaries and Domain Structure In µC-si:h Crystallsupporting
confidence: 83%
“…Hexagonal structures were also found in silicon and germanium thin films deposited by laser ablation 5,6 and recrystallized by an electron beam 7 . The existence of silicon polytypes was deduced using x-ray diffraction 8 , High Resolution Transmission Electron Microscopy (HRTEM) 9 and Raman studies 10 . In the TEM studies the polytypes appear as a sequence of stacking faults and twin defects, locally ordered on a few nanometers, but no long range order on tens of nanometers was demonstrated.…”
Section: Introductionmentioning
confidence: 99%
“…Figure 1 shows the atomic structure of the relaxed WZ-Si and the corresponding band-structure. The cell parameters and band gap properties of WZ-Si obtained from the present work are listed in Table I, together with data reported in the literature [12,22,23,24]. The relaxed WZ-Si is an indirect band-gap semiconductor with a calculated band gap of 0.47 eV between the valence-band maximum (VBM) and the conduction-band minimum (CBM) at M, and a direct band gap of 1.02 eV at Γ, respectively.…”
Section: A Balanced Structure Of Wuzite-simentioning
confidence: 99%