Additional phonon modes and close satellite valleys crucialfor electron transport in hexagonal gallium nitride

Brazis, R.; Raguotis, R.

doi:10.1063/1.1776622

Cited by 18 publications

(12 citation statements)

References 16 publications

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“…It is particularly interesting to note that the arguments of Bulutay et al [258] add considerable credence to the earlier inflection point argument of Krishnamurthy et al [256]. In 2004, Brazis and Raguotis [259] reported on the results of a Monte Carlo study involving additional phonon modes and a smaller conduction band inter-valley energy separation for the case of wurtzite GaN. Their results were found to be much closer to the experimental results of Wraback et al [11] than those found previously.…”

Section: Electron Transport Within Gan: a Reviewsupporting

confidence: 58%

A 2015 perspective on the nature of the steady-state and transient electron transport within the wurtzite phases of gallium nitride, aluminum nitride, indium nitride, and zinc oxide: a critical and retrospective review

Siddiqua

Hadi

Shur

et al. 2015

J Mater Sci: Mater Electron

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Wide energy gap semiconductors are broadly recognized as promising materials for novel electronic and optoelectronic device applications. As informed device design requires a firm grasp of the material properties of the underlying electronic materials, the electron transport that occurs within the wide energy gap semiconductors has been the focus of considerable study over the years. In an effort to provide some perspective on this rapidly evolving and burgeoning field of research, we review analyzes of the electron transport within some wide energy gap semiconductors of current interest in this paper. In order to narrow the scope of this review, we will primarily focus on the electron transport that occurs within the wurtzite phases of gallium nitride, aluminum nitride, indium nitride, and zinc oxide in this review, these materials being of great current interest to the wide energy gap semiconductor community; indium nitride, while not a wide energy gap semiconductor in of itself, is included as it is often alloyed with other wide energy gap semiconductors, the resultant alloys being wide energy gap semiconductors themselves. The electron transport that occurs within zinc-blende gallium arsenide is also considered, albeit primarily for bench-marking purposes. Most of our discussion will focus on results obtained from our ensemble semi-classical three-valley Monte Carlo simulations of the electron transport within these materials, our results conforming with state-of-the-art wide energy gap semiconductor orthodoxy. A brief tutorial on the Monte Carlo electron transport simulation approach, this approach being used to generate the results presented herein, is also provided. Steady-state and transient electron transport results are presented. The evolution of the field, and a survey of the current literature, are also featured. We conclude our review by presenting some recent developments on the electron transport within these materials.

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Section: Electron Transport Within Gan: a Reviewsupporting

confidence: 58%

A 2015 perspective on the nature of the steady-state and transient electron transport within the wurtzite phases of gallium nitride, aluminum nitride, indium nitride, and zinc oxide: a critical and retrospective review

Siddiqua

Hadi

Shur

et al. 2015

J Mater Sci: Mater Electron

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“…A revised model has been proposed [5] and proved to be in excellent agreement with experimental drift velocity data [3]. In this paper we compare MC and experimental data on electron mobility obtained at room temperature (Fig.…”

Section: Effects Of Additional Phonons In Wurtzite Ganmentioning

confidence: 95%

“…We conclude that the additional phonon modes and close satellite valleys are crucial for electron transport in hexagonal GaN crystal [5]. Phonon accumu- lation is another interesting point becoming exceedingly important at low lattice temperatures.…”

Section: Effects Of Excess Phonons In Cubic Ganmentioning

confidence: 99%

“…1. Electron drift mobility in hexagonal GaN at 300 K calculated from experimental data [3] (dots) compared with the Monte Carlo data: 1 -the GaN parameter set [5] including the Γ 1 −Γ 3 valley separation of 400 meV, the inter-valley phonon energy of 80 meV, the main LO-phonon energy of 92.7 meV, and additional LO-phonon energy 26 meV; 2 -the upper-energy LO-phonons (92.7 meV) excluded; 3 -the lower-energy LO-phonons (26 meV) excluded; 4 -conventional (actually cubic) data set [4].…”

Section: Effects Of Additional Phonons In Wurtzite Ganmentioning

confidence: 99%

See 1 more Smart Citation

The Influence of Phonon Emission on Electron Transport in Hexagonal and Cubic Gallium Nitride

Brazis¹,

Raguotis²

2005

Acta Phys. Pol. A

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Electron transport characteristics of GaN crystals in high electric fields are shown to be essentially influenced by different optical phonon modes inherent to the hexagonal and cubic phases of these compound crystals. Additional optical phonon modes (≈ 26 meV) competing with the higher-energy ones (≈ 92 meV) in hexagonal GaN, together with the low-lying satellite valley (Γ 3 ), dramatically reduce the drift mobility of electrons in comparison with conventional models. Presented Monte Carlo data are in excellent agreement with the time-of-flight experiment. The cubic GaN crystal phase with its satellite electron energy valleys shifted well above the main (Γ1) valley is chosen as a convenient medium for elucidating the role of high-energy longitudinal optical phonon accumulation. A simple efficient one-particle Monte Carlo method is proposed for an account of excess phonons. Phonon heating is shown to bring about the moderate additional reduction of the drift mobility and an increase in mean electron energy.

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“…the broadening activation energy (12 meV) appears to be consistent with low-energy acoustic phonon modes (17-39 meV range) [13,14]. It should be noted that Brazis and Raguotis found it necessary to include such low-energy phonon modes in their Monte Carlo study of electron transport in GaN [14], and that their results have been found to be much Electron mobility spectra extracted using HR-QMSA with a 50 points/decade mobility grid. Note the significant improvement in resolution and the broadening effect of temperature on the linewidth of the conductivity peaks.…”

Section: Resultsmentioning

confidence: 64%

Thermal broadening of two-dimensional electron gas mobility distribution in AlGaN/AlN/GaN heterostructures

Umana‐Membreno

Stomeo

Tasco

et al. 2010

2010 Proceedings of the European Solid State Device Research Conference

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Two-dimensional electron gas (2DEG) transport in Al 0.3 Ga 0.7 N/AlN/GaN heterostructures has been studied using magnetic-field dependent Hall-effect measurements and advanced mobility spectrum analysis techniques over the temperature range from 95 K to 300 K. It is shown that electronic transport is due to a single well-defined 2DEG species, with room-temperature sheet concentration and average mobility of 9.3×10 12 cm -2 and 1,880 cm 2 /Vs, respectively. No parasitic conduction through the bulk GaN layer was detected. Importantly, it is shown that the 2DEG exhibits an approximately Gaussian mobility distribution, the linewidth of which broadens with increasing temperature. This is the first reported observation of thermal broadening effects in the 2DEG mobility distribution.

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Additional phonon modes and close satellite valleys crucialfor electron transport in hexagonal gallium nitride

Cited by 18 publications

References 16 publications

A 2015 perspective on the nature of the steady-state and transient electron transport within the wurtzite phases of gallium nitride, aluminum nitride, indium nitride, and zinc oxide: a critical and retrospective review

A 2015 perspective on the nature of the steady-state and transient electron transport within the wurtzite phases of gallium nitride, aluminum nitride, indium nitride, and zinc oxide: a critical and retrospective review

The Influence of Phonon Emission on Electron Transport in Hexagonal and Cubic Gallium Nitride

Thermal broadening of two-dimensional electron gas mobility distribution in AlGaN/AlN/GaN heterostructures

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