Addition to the theory of LPE growth: Crystallization mechanisms

Peev, N. S.

doi:10.1002/crat.201000119

Cited by 3 publications

(14 citation statements)

References 28 publications

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“…Besides that, three techniques of liquid phase epitaxial growth are known-equilibrium cooling technique, super cooling technique and step cooling technique [3]. The change with time of the super saturation above the substrate for the different techniques and for normal and screw dislocations mechanism of growth is investigated in [26] (the main results are presented in Table 1). …”

Section: Concentration Of J-componentsmentioning

confidence: 99%

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Processes in phase boundary region during liquid phase growth

Peev

2013

Cryst. Res. Technol.

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Key words liquid phase growth, phase boundary region.The behavior of components within the phase boundary region during liquid phase growth is the subject of the present article. Based on the supposition that the phase boundary is a structured region, repeating the periodicity of the substrate, the distribution of different components within the phase boundary is considered. Assuming that the value of the supersaturation at the upper end of the phase boundary defines the growth rate of the compound, a relation has been derived, concerning the extension of the phase boundary. The case of liquid phase epitaxial growth of GaAs is considered and an effort for evaluation of the phase boundary extension is undertaken. The linear dependence of the stationary growth rate on the cooling rate, predicted previously, is proved experimentally.

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Section: Concentration Of J-componentsmentioning

confidence: 99%

“…At a constant supersaturation in front of the substrate the growth performs stationary and the growth rate υ gr is a linear function of the cooling rate υ T [26,27]:…”

Section: Concentration Of J-componentsmentioning

confidence: 99%

Processes in phase boundary region during liquid phase growth

Peev

2013

Cryst. Res. Technol.

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“…The present paper is in fact a continuation of references [32,33]. Two kinds of components have been distinguished: the i-components and the j-components [32][33][34][35][36][37][38]. The i-components are the dilute components of the process -their concentration in the liquid phase is smaller than that in the solid phase:…”

Section: Introductionmentioning

confidence: 99%

“…The consequence of this fact is that their concentration decreases with time permanently, dC L i /dt < 0, and the liquid phase becomes increasingly deficient in these components [32][33][34][35][36][37][38]. The j-components have a high content in the liquid phase: their concentration in the liquid phase is higher than that in the solid one: C L j > C S j and therefore it increases with time permanently dC L j /dt > 0, the liquid phase becomes more and more abundant of j-components.…”

Section: Introductionmentioning

confidence: 99%

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Theory and experiments of liquid phase epitaxial growth Part 1

Peev¹

2018

Journal of Research in Physics

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Characterization of the liquid phase epitaxial growth is in the scope of the present paper. The determination of the main parameters of the process such as the stationary growth rate, the time constant, the stationary supercooling, the kinetic coefficient, the initial growth rate, the crystallization mechanism are under consideration. Pursuing this aim a differential equation has been obtained which allows obtaining the dependences of the supersaturation, the growth rate and the growth layer thickness on the duration of growth. These dependences allow the determination of the above mentioned process parameters. Two mechanisms of crystallization are considered - the normal growth and the growth assisted by the screw dislocations. The two dimensional nuclei growth has not been considered because an analytical solution of the equation was not possible. Some of the theoretical contentions are confirmed by the experiments. Using the obtained values of the parameters dependences are defined. Good agreement between theory and experimental results is observed.

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Sculpting Electrochemically Growing or Grown Microarchitectures

Wang

Zhao

Cui

et al. 2022

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Microarchitectures with complex interior structures are important for many applications. However, engineering complex interior structures within microarchitectures are challenging. This article reports the introduction of electrochemical sculpting processes to carve the microarchitectures during or after their electrochemical growing process to design the interior structure of the microarchitectures. The electrochemical growing and sculpting process tangle together under the constant voltage electrodeposition mode with their strength depending on the ion concentration gradient and the voltage value. The unique thawing process of the frozen electrolyte is used to create the desired sharp ion concentration gradient, and has the potential to control the strength of the sculpting and the growing processes. How to completely decouple the growing and the sculpting process is further studied to gain more accurate control over the interior structures of the microarchitectures. It is revealed that the sculpting process can be exclusively applied onto the electrochemically grown microarchitectures simply by reversing the electric field without triggering any growing processes. Microarchitectures with complex interior structures, including micropyramids with a single cavity exclusively at the outward or every apex to multi‐walled hollow pyramids with designable wall numbers and inter‐wall distances are prepared as examples.

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Addition to the theory of LPE growth: Crystallization mechanisms

Cited by 3 publications

References 28 publications

Processes in phase boundary region during liquid phase growth

Processes in phase boundary region during liquid phase growth

Theory and experiments of liquid phase epitaxial growth Part 1

Sculpting Electrochemically Growing or Grown Microarchitectures

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