Addition of SiF4 to standard SiH4+H2 plasma: an effective way to reduce oxygen contamination in μc‐Si:H films

Абрамов, А.; Cabarrocas, Pere Roca i

doi:10.1002/pssc.200982798

Cited by 7 publications

References 14 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

Tandem and Multiple-junction Devices Based on Thin-film Silicon Technology

Ballif

Boccard

Söderström

et al. 2014

Advanced Concepts in Photovoltaics

View full text Add to dashboard Cite

Chapter 2 discusses multiple-junction devices made of thin-film of silicon deposited from a vapor phase. This technology—which combines the advantages of silicon-based technologies (non-toxicity, availability) and of thin-films technologies (sparse use of materials, upscalibility, flexibility)—is unbeatable in terms of price per m2 and has therefore attracted a lot of attention in the race to a massive integration of PV in the world electricity mix. The basics of the technology are reviewed in a first part, including the historical development of amorphous and microcrystalline silicon and alloys, and the essential challenges of multi-junction integration; a second part gathers the most relevant results in terms of efficiency and tackles the recent developments which brought novel advances to the technology, as well as the most promising routes for further improvements.

show abstract

Tandem and Multiple-junction Devices Based on Thin-film Silicon Technology

Ballif

Boccard

Söderström

et al. 2014

Advanced Concepts in Photovoltaics

View full text Add to dashboard Cite

show abstract

High quality boron-doped epitaxial layers grown at 200°C from SiF4/H2/Ar gas mixtures for emitter formation in crystalline silicon solar cells

et al. 2017

View full text Add to dashboard Cite

Controlling the doping profile in solar cells emitter and front/back surface field is mandatory to reach high efficiencies. In the current state of the art, these doped layers are made by dopant diffusion at around 900°C, which implies potential temperature induced damages in the c-Si absorber and for which a precise control of doping is difficult. An alternative solution based on boron-doped epitaxial silicon layers grown by plasma-enhanced chemical vapor deposition (PECVD) from 200°C using SiF4/H2/Ar/B2H6 chemistry is reported. The structural properties of the doped and undoped epitaxial layers were assessed by spectroscopic ellipsometry (SE), high resolution transmission electron microscopy (HR-TEM) and X-ray diffraction (XRD). The incorporation of boron has been studied via plasma profiling time of flight mass spectrometry (PP-TOFMS) and secondary ion mass spectrometry (SIMS) measurements. The boron-doped epitaxial layers revealed excellent structural and electrical properties even for high carrier concentrations (>1019cm-3). Sheet resistances between 100 and 130 Ω/sq can been obtained depending on the thickness and the doping concentration, which is within the range of targeted values for emitters in c-Si solar cells. Electrochemical capacitance voltage (ECV) revealed a uniform doping profile around 3.1019 cm-3 and by comparing with SIMS measurement a doping efficiency around 50% has been found.

show abstract