2009
DOI: 10.1021/nl803066v
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Adaptive Logic Circuits with Doping-Free Ambipolar Carbon Nanotube Transistors

Abstract: A CMOS-like inverter was integrated by using ambipolar carbon nanotube (CNT) transistors without doping. The ambipolar CNT transistors automatically configure themselves to play a role as an n-type or p-type transistor in a logic circuit depending on the supply voltage (V DD) and ground. A NOR (NAND) gate is adaptively converted to a NAND (NOR) gate. This adaptiveness of logic gates exhibiting two logic gate functions in a single logic circuit offers a new opportunity for designing logic circuits with high int… Show more

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Cited by 112 publications
(123 citation statements)
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“…As discussed above, the ambipolar TFTs cannot be completely turned OFF, which usually leads to an output voltage swing smaller than conventional complementary circuits. 46 Here we designed the widths of c and d (the "pull-down" transistors) to be 4 times larger than transistors a and b to balance the network strength. In this way, the output swing is maximized and the rising and falling times are equalized.…”
Section: ϫ10mentioning
confidence: 99%
See 1 more Smart Citation
“…As discussed above, the ambipolar TFTs cannot be completely turned OFF, which usually leads to an output voltage swing smaller than conventional complementary circuits. 46 Here we designed the widths of c and d (the "pull-down" transistors) to be 4 times larger than transistors a and b to balance the network strength. In this way, the output swing is maximized and the rising and falling times are equalized.…”
Section: ϫ10mentioning
confidence: 99%
“…The mobilities are comparable to or better than that of CNT networks fabricated by other methods. 35,39Ϫ43,45Ϫ47 Ambipolar operation in turn allows fabrication of complementary-like logic circuits, 16,46,48,49 which is desirable from a circuit design perspective.…”
mentioning
confidence: 99%
“…The gate electrode (Ti (5 nm)/Au (50 nm)) was formed similarly to the source and drain electrodes. The yield of transistors with on/off ratio of greater than 10 4 was 88% [5]. The detailed method has been described elsewhere [34,35].…”
Section: Methodsmentioning
confidence: 99%
“…[1,2] More interestingly, ambipolarity (in which the majority carrier is determined by the gate voltage) has been observed under vacuum and with a top gate oxide. [3][4][5] The unique ambipolarity of carbon nanotubes has been regarded as a drawback in their application to Si technology. To suppress the ambipolarity of the CNTs in CNT-based complementary metal oxide semiconductor (CMOS) technology, numerous chemical dopants such as amine-rich polymers, alkali metals, and nitronium ions, and various doping methods [6][7][8][9][10][11][12][13][14][15][16] have been suggested to control the majority carrier type of CNTs.…”
mentioning
confidence: 99%
“…With a single CNT as active channel 35 ( Fig. 2b), FETs have shown large on/off ratios, but poor carrier mobility, which can be improved by employing aligned CNTs 36 or random CNTs network 37,38 ( Fig. 2c).…”
Section: D Nanomaterialsmentioning
confidence: 99%