Adaptive half-metallicity via magnetic proximity in an electrically sensitive 1T’-WTe2/CrBr3 vdW heterostructure

Tunable long-range spin transport in a van der Waals Fe3GeTe2/WSe2/Fe3GeTe2 spin valve

“…As the applied field increases further, polarity changes from negative to positive, and accordingly the majority of the spin-up states dominate at E F . 41 The negative electric field calculation for both PC and APC situations is also considered, which hosts similar spin polarization behaviour, as shown in Fig. S11 and S12 (ESI†), respectively.…”

Quantum enhanced efficiency and spectral performance of paper-based flexible photodetectors functionalized with two dimensional materials

“…In recent years, a wide variety of narrow band gap semiconductor-based PDs have been reported [29][30][31][32][33][34][35][36][37][38][39][40]. Such PDs are still restricted in practical application of devices because of lacking broadband absorption, low stability and slow responses.…”

Twist Proximity-Endowed Large Figure of Merit in a Band-Modulated CrI3/1T-MoS2 Moiré Superlattice

“…The pristine 1T-MoS 2 exhibits high thermoelectric performance with a Seebeck coefficient value of 85.6 μV/K . Further, 2D ferromagnetism in the CrI 3 layer offers wide bandgap spin transport pathways along with peculiar physical properties, thermoelectric properties, and robust proximity effect. − ML-CrI 3 is reported to be a potential candidate for TE application, which exhibits a Seebeck coefficient value of 291 μV K –1 at 800 K and the figure of merit of the order 0.95 and 1.57. , The proximity effect between the adjacent CrI 3 and MoS 2 layers is expected to be further enhanced upon being subjected to the twist effect. The twisted heterostructure hosts macroscopic TE characteristics via local electronic structure manipulation.…”