The solution behaviors of Fe-Si-C system are characterized by the formation of SiC, and the properties are defined by the value of the standard Gibbs free energy of formation of SiC,. However, a review shows that reported values of do not agree among the investigators and are shown a significant discrepancy among them as high as 16 kJ/molSiC. In order to resolve this uncertainty, new value of is assessed by reproducing experimentally determined two-fold saturation data with the UIP modeling FeSi-C melt. The proposed value of is given by following equation.With the proposed , the UIP model for Fe-Si-C system was developed from the experimentally determined solubility of C and two-fold saturations of C and SiC taken from the literature reported. The resulting activity coefficients are expressed as follows: The model reproduces well the experimentally determined C solubility as well as the two-fold saturation of C and SiC. It also describes well the solution behaviors in a wide range of compositions and temperatures, permitting its use for various applications such as ironmaking, steelmaking, cast-iron, Si-based ferroalloys, and the low temperature liquid phase growth of electronic grade silicon carbide.KEY WORDS: activity coefficients of Fe, Si, and C; standard Gibbs free energy of formation of SiC; unified interaction parameter model.