Actively mode-locked p-Ge laser in Faraday configuration

Muravjov, A. V.; Withers, S. H.; Strijbos, R.C.; Pavlov, S.G.; Shastin, V. N.; Peale, Robert E.

doi:10.1063/1.125179

Cited by 22 publications

(9 citation statements)

References 4 publications

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“…Taking into account the large relative width of the gain spectrum w/o-1 the duration of the generated pulse of far-infrared radiation can be as short as-1ps. Also it was demonstrated in37 that p-Ge active sample used as far-infrared optical amplifier 36,41 which is more flexible to modifications of gain modulation scheme and seems to be promising for the generation of picosecond duration pulses 41…”

Section: Valence Band States Landau Quantizationmentioning

confidence: 99%

THz oscillators based on intraband transitions in bulk semiconductors

et al. 1999

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The operating princip'es and experimental results concerning far-infrared lasers based on the intersubband hot holes optical transitions in crossed electric and magnetic fields as well as on the optically excited intracenter shallow impurity states are reviewed and discussed. The analysis ofthe state ofthe art and the possible directions ofthe development ofp-Ge hot hole intersubband transitions laser and the results of the recent theoretical and experimental investigations of new THz media based on impurity transitions in Si doped by phosphorus are presented.

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Section: Valence Band States Landau Quantizationmentioning

confidence: 99%

THz oscillators based on intraband transitions in bulk semiconductors

et al. 1999

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“…This mechanism provides narrow band far-infrared generation which is linearly tunable by the magnetic field strength and yields output powers of several 100 mW [50,51]. In the last decade p-type inter-valence band lasers were optimized to yield picosecond pulses [52,53] at low magnetic fields [54]. A review on p-type germanium lasers is given in reference [55].…”

Section: Nonlinear Spectroscopy On Shallow Donor Transitionsmentioning

confidence: 99%

Nonlinear THz Spectroscopy of n-Type GaAs

Gaal

Reimann

Woerner

et al. 2007

Ultrafast Phenomena XV

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In this thesis, the ultrafast dynamics of conduction band electrons in semiconductors are investigated by nonlinear terahertz (THz) spectroscopy. In particular, n-doped gallium arsenide samples with doping concentrations in the range of 10 16 cm −3 to 10 17 cm −3 are studied. A novel source for the generation of intense THz radiation is developed which yields single-cycle THz transients with field amplitudes of more then 400 kV/cm. The THz source uses ultrashort optical laser pulses provided by a Ti:sapphire oscillator. In addition, a two-color THz-pump mid-infrared-probe setup is implemented, which allows for two-dimensional time-resolved experiments in the far-infrared wavelength range. Field ionization of neutral shallow donors in gallium arsenide with intense, ultrashort THz pulses and subsequent coherent radiative recombination of electrons to impurity ground states is observed at room temperature. The superradiant decay of the nonlinear polarization results in the emission of a coherent signal with picosecond lifetimes. Such nonlinear signals, which exhibit a lifetime ten times longer than in the linear regime are observed for the first time. At low temperatures and THz field strengths below 5 kV/cm, Rabi flopping on shallow donor transitions is demonstrated. For the first time, the polar electron-LO phonon interaction is directly measured in the quantum kinetic transport regime. Quasi-instantaneous acceleration of conduction band electrons in the polar gallium arsenide lattice by the electric field of intense THz pulses and subsequent probing of the mid-infrared transmission reveals a modulation of the transmission along the THz-mid-infrared delay coordinate with the frequency of the LO phonon. These modulations directly display the relative phase between the electron motion and its surrounding virtual phonon cloud. Quantum kinetic model calculations fully account for the observed phenomena.

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“…The authors have worked for many years to advance the technology of inter-valence-band hot hole lasers based on bulk rods of p-Ge having ∼cubic centimeter active volume. [3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19] One of us (AVM) has been involved in this research since its beginnings more than two decades ago. 20 Features of this laser are broad tunability (1.5-4.2 THz) with high spectral density in a single device ( Fig.…”

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confidence: 99%

Inter-Valence-Band Hot Hole Laser in Two-Dimensional Delta-Doped Homoepitaxial Semiconductor Structures

Peale¹,

Dolguikh²,

Muravjov³

2007

Journal of Nanoelectronics and Optoelectronics

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This paper reviews, compares, and contrasts recent gain calculations for a laser concept in deltadoped p-Ge and p-GaAs. Gain is calculated using distribution functions, determined from Monte Carlo simulations, for hot holes in crossed electric and magnetic fields. The results suggest that Ge is the superior material when considering only the factor of optical gain, but the possibility of lasing in GaAs can take advantage of a wider range of growth opportunities.

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Actively mode-locked p-Ge laser in Faraday configuration

Cited by 22 publications

References 4 publications

THz oscillators based on intraband transitions in bulk semiconductors

THz oscillators based on intraband transitions in bulk semiconductors

Nonlinear THz Spectroscopy of n-Type GaAs

Inter-Valence-Band Hot Hole Laser in Two-Dimensional Delta-Doped Homoepitaxial Semiconductor Structures

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