Active tunable THz metamaterial array implemented in CMOS technology

Liu, Yongshan; Sun, Tong; Xu, Yong; Wu, Xiaojun; Bai, Zhongyang; Sun, Yun; Li, Helin; Zhang, Haoyi; Chen, Kanglong; Ruan, Cunjun; Hu, Yuanqi; Zhao, Weisheng; Nie, Tianxiao; Wen, Lianggong

doi:10.1088/1361-6463/abc77c

Cited by 16 publications

(4 citation statements)

References 63 publications

(99 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…By utilizing custom-designed CMOS-based semiconductor structures, it is possible to circumvent the cutoff frequency limitation of commercial transistors (Figure 2e) [53]. The meta-atom structure, consisting of a square SRR on top of a six-layer CMOS-based semiconductor structure, is shown in Figure 2f.…”

Section: Complementary Metal-oxide-semiconductor (Cmos) Transistormentioning

confidence: 99%

Terahertz Reconfigurable Intelligent Surfaces (RISs) for 6G Communication Links

2022

View full text Add to dashboard Cite

The forthcoming sixth generation (6G) communication network is envisioned to provide ultra-fast data transmission and ubiquitous wireless connectivity. The terahertz (THz) spectrum, with higher frequency and wider bandwidth, offers great potential for 6G wireless technologies. However, the THz links suffers from high loss and line-of-sight connectivity. To overcome these challenges, a cost-effective method to dynamically optimize the transmission path using reconfigurable intelligent surfaces (RISs) is widely proposed. RIS is constructed by embedding active elements into passive metasurfaces, which is an artificially designed periodic structure. However, the active elements (e.g., PIN diodes) used for 5G RIS are impractical for 6G RIS due to the cutoff frequency limitation and higher loss at THz frequencies. As such, various tuning elements have been explored to fill this THz gap between radio waves and infrared light. The focus of this review is on THz RISs with the potential to assist 6G communication functionalities including pixel-level amplitude modulation and dynamic beam manipulation. By reviewing a wide range of tuning mechanisms, including electronic approaches (complementary metal-oxide-semiconductor (CMOS) transistors, Schottky diodes, high electron mobility transistors (HEMTs), and graphene), optical approaches (photoactive semiconductor materials), phase-change materials (vanadium dioxide, chalcogenides, and liquid crystals), as well as microelectromechanical systems (MEMS), this review summarizes recent developments in THz RISs in support of 6G communication links and discusses future research directions in this field.

show abstract

Section: Complementary Metal-oxide-semiconductor (Cmos) Transistormentioning

confidence: 99%

Terahertz Reconfigurable Intelligent Surfaces (RISs) for 6G Communication Links

2022

View full text Add to dashboard Cite

show abstract

“…[1][2][3][4][5] The increasing demand for broadband on-chip multifunctional devices has emphasized CMOS technology for THz photonic integrated circuits (TPICs), as it supports large-scale collaborative device clusters. [6][7][8][9] An integrated photonic platform requires various advanced signal processing stages, among which narrowband filtering is critical in preserving signals of interest. At microwave frequencies, photonic circuits provide enhanced filtering functionalities to overcome the low-range frequency tunability of electronic filters.…”

Section: Introductionmentioning

confidence: 99%

Electrically Tunable Topological Notch Filter for THz Integrated Photonics

Gupta,

Kumar,

Singh

2023

Advanced Optical Materials

View full text Add to dashboard Cite

Electromagnetic filtering is essential for emerging integrated photonic technologies and widely adaptable processing of high‐bandwidth signals. The conventional electro‐optic modulator‐based photonic approach for signal filtering at microwave frequencies cannot be implemented at terahertz (THz) frequencies due to the unavailability of the THz signal‐driven optical modulator. Here, an electrically tunable on‐chip THz photonic notch filter based on the topologically protected valley hall waveguide‐cavity platform is demonstrated. The device shows a significantly large notch suppression depth of more than 20 dB with a return loss of 13 dB in the entire tuning range of notch frequency. The feedback control circuit enables precise control of the notch frequency shift with a minimum step size of 7 MHz. This work extends the application of topological photonic crystals in developing THz‐integrated photonic devices for transformative technologies, including sixth‐generation (6G) communication and high‐resolution spectral sensing.

show abstract

“…These active materials can be incorporated into the metamaterial as the substrate, surrounding media, part of the resonator or as an entire resonator itself. Various material systems have been explored for THz metadevices, including conventional semiconductors [22][23][24][25][26][27][28][29][30][31][32][33][34][35][36][37], phase change materials [38][39][40][41], phase transition materials [42][43][44][45][46][47][48], liquid crystals [49][50][51][52][53], 2D materials [54][55][56][57][58][59][60][61][62][63][64][65], 3D semimetals [66], topological insulators [67], perovskites [68]…”

Section: Introduction To Terahertz Metadevicesmentioning

confidence: 99%

Terahertz MEMS metadevices

Pitchappa

Kumar

Singh

et al. 2021

J. Micromech. Microeng.

View full text Add to dashboard Cite

Terahertz (THz) part of the electromagnetic spectrum (0.1–10 THz) holds the key for next-generation high-speed wireless communication, non-destructive biosensing, fingerprint chemical detection and imaging for astronomy and security surveillance. The limited THz response of naturally occurring materials had left a technological gap in the THz region of the electromagnetic spectrum. Artificially engineered materials termed as ‘metamaterials’, have shown great potential in THz wave interaction and its active counterpart termed as ‘metadevices’ have been widely reported for on-demand manipulation of THz waves. One of the most efficient means of realizing metadevices is to reconfigure the shape of unit cells and hence the corresponding THz response. The 50+ years of development in microelectromechanical systems (MEMS) and the wide array of microactuator designs provide a perfect platform to achieve structural reconfiguration of microscale metamaterial unit cells in both in-plane and out-of-plane directions. In this review, we present a comprehensive overview of various MEMS approaches adopted for the demonstration of THz metadevices, their advantages and limitations. The future research directions of THz MEMS metadevices are also discussed. The seamless integration of matured MEMS technology with incipient THz metamaterials provides significant advantages in terms of enhanced performances, advanced functionalities and large scale manufacturability, that is critical for the development of future THz technologies.

show abstract

Active tunable THz metamaterial array implemented in CMOS technology

Cited by 16 publications

References 63 publications

Terahertz Reconfigurable Intelligent Surfaces (RISs) for 6G Communication Links

Terahertz Reconfigurable Intelligent Surfaces (RISs) for 6G Communication Links

Electrically Tunable Topological Notch Filter for THz Integrated Photonics

Terahertz MEMS metadevices

Contact Info

Product

Resources

About