Active-Matrix Micro-LED Display Driven by Metal Oxide TFTs Using Digital PWM Method

Lin, Yi-Zhen; Liu, Chun; Zhang, Jinhui; Yuan, Yikai; Cai, Wei; Zhou, Lei; Xu, Miao; Wang, Lei; Wu, Weijing; Peng, Junbiao

doi:10.1109/ted.2021.3112947

Cited by 29 publications

(27 citation statements)

References 19 publications

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“…Then the total data writing time in a frame can be describe as 𝑇 𝑆𝑐𝑎𝑛,𝑡2 = [(𝑃 + 1)𝑛 + 2𝑚] * 𝑇 𝑆𝑐𝑎𝑛 (5) As indicated in Eq. ( 3) and ( 5), the data writing time in a frame can be reduced with the proposed driving method, then the same brightness can be achieved using a smaller current.…”

Section: Transient Performancementioning

confidence: 99%

“…In recent years, a few PWM based pixel circuits have been proposed for Micro-LED display [4,5]. Kim et al demonstrated a PWM conversion method by comparing the data voltage with a sweep signal [4].…”

Section: Introductionmentioning

confidence: 99%

“…However, the pixel circuit seems a bit complicated, as the resolution is only 50 PPI even using highmobility LTPS TFTs. A simpler pixel circuit consisting of metaloxide TFTs was proposed by Lin using a hybrid driving method [5]. But the proportion of light-emitting time in a frame is short, then the power conversion efficiency is low Therefore, it is a great challenge to obtain high performance Micro-LED displays using simple and smart PWM pixel circuit.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

P‐9: Student Poster: Two‐Mode PWM Driven Micro‐LED Displays with Dual‐Gate Metal‐Oxide TFTs

Liao

Qiu

et al. 2022

Symp Digest of Tech Papers

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A two‐mode pulse width modulation (PWM) pixel circuit is proposed for Micro‐LED display. The proposed driving method divides the consecutive 8 sub‐frames (256 gray levels) into low‐bit and high‐bit subframes, which are respectively driven by simultaneous emission (SE) and progressive emission (PE) modes. Compared with the traditional PWM driving scheme, the proposed one shows an increased effective luminous time ratio by 40% for a frame rate of 120Hz, which benefits higher power conversion efficiency. There are only 5 dual‐gate metal‐oxide transistors for the pixel circuit, while a source‐follower structure is adopted to extract the threshold‐voltage shift(ΔVth). Simulation results demonstrate that the current error rates can be reduced to 2% with ΔVth of ± 1 V for various grayscales.

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Section: Transient Performancementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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P‐9: Student Poster: Two‐Mode PWM Driven Micro‐LED Displays with Dual‐Gate Metal‐Oxide TFTs

Liao

Qiu

et al. 2022

Symp Digest of Tech Papers

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“…On-chip capacitors with 19 nF/cm 2 are also available by using the M1 and M2 as two plates and the gate oxide as an insulating layer. More details about the TFT device technology can be found elsewhere [ 11 ].…”

Section: Devicementioning

confidence: 99%

“…Characteristics of the TFT devices used are calibrated with experimental data [ 11 ]. An Hspice Level = 62 RPI Poly Si TFT Model is established using parameter extraction to fit the measured device characteristics.…”

Section: Devicementioning

confidence: 99%

A Delay-Cell-Controlled VCO Design for Unipolar Single-Gate Enhancement-Mode TFT Technologies

Wei

Zhao

et al. 2022

Micromachines

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This work outperforms the previous literatures by proposing a delay-cell-controlled voltage control oscillator (VCO) design for common unipolar, single-gate, and enhancement-mode thin-film transistor (TFT) technologies. A design example with InZnO TFTs is simulated to verify the proposed design. The design example has a 500 μW power consumption, 0.7 mm2 area, 3.8 kHz–8 kHz output frequency range, 600 Hz/V tuning sensitivity, and 4% maximum linear error. This design may have the potential to be used for flexible, low cost, and moderate speed sensor readout interfaces.

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Synergistically Enhanced Performance and Reliability of Abrupt Metal‐Oxide Heterojunction Transistor

Wang

Yang

et al. 2022

Adv Elect Materials

Self Cite

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The large‐area low‐temperature processing capability and versatile characteristics of amorphous oxide semiconductor (AOS) thin‐film transistors (TFTs) are highly expected to promote the developments of next‐generation displays, 3D integrated circuit (3DIC), flexible chips, and electronics. However, the abundant native defects in AOSs engrain an inherent trade‐off between high mobility and trustworthy stability in AOS TFTs, fundamentally limiting the performance metrics and integration scale of oxide‐based electronics. To surmount this obstacle, the bilayer AOS channel is highly expected to combine the merits of diversified AOSs, while the efficiency of such an AOS “heterojunction” is debatable. This work systematically compares the TFTs based on amorphous InGaZnO (a‐IGZO), amorphous InZnO (a‐IZO), and a‐IZO/a‐IGZO bilayer. The active cation interaction between metal‐oxide semiconductors gives rise to a mixed AOS layer rather than a heterojunction channel, corresponding to moderate performance metrics. Such a spontaneous cation interdiffusion is effectively prevented using a dense metal‐oxide dielectric interlayer, aluminum oxide (AlOx). The sharpened interface effectively forms an abrupt metal‐oxide heterojunction, while the electron can still tunnel through the ultrathin AlOx to create a quantum well of 2D electron gas (2DEG). The overall performance and reliability of multilayer AOS TFT are synergistically enhanced using the proposed abrupt metal‐oxide heterojunction architecture.

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Active-Matrix Micro-LED Display Driven by Metal Oxide TFTs Using Digital PWM Method

Cited by 29 publications

References 19 publications

P‐9: Student Poster: Two‐Mode PWM Driven Micro‐LED Displays with Dual‐Gate Metal‐Oxide TFTs

P‐9: Student Poster: Two‐Mode PWM Driven Micro‐LED Displays with Dual‐Gate Metal‐Oxide TFTs

A Delay-Cell-Controlled VCO Design for Unipolar Single-Gate Enhancement-Mode TFT Technologies

Synergistically Enhanced Performance and Reliability of Abrupt Metal‐Oxide Heterojunction Transistor

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