Active‐ion‐gated room temperature acetone gas sensing of ZnO nanowires array

Abstract

Reducing the high operation temperature of gas sensor to room temperature (RT) have attracted intense interests for its distinct preponderances, including energy‐saving and super stability, which presents great prospects in commercial application. The exciting strategies for RT gas sensing, such as unique materials with activated surface or light activation, do not directly modulate the active ions for gas sensing, limiting the RT gas sensing performances. Here, an active‐ion‐gated strategy has been proposed for RT gas sensing with high performance and low power consumption, in which gas ions in triboelectric plasma are introduced into metal oxide semiconductor (MOS) film to act as both floating gate and active sensing ions. The active‐ion‐gated ZnO nanowires (NWs) array shows a sensitivity of 38.3% to 10 ppm acetone gas at RT, and the maximum power consumption is only 4.5 mW. At the same time, the gas sensor exhibits excellent selectivity to acetone. More importantly, the response (recovery) time of this sensor is as low as 11 s (25 s). It is found that OH−(H2O)4 ions in plasma are the key for realizing RT gas sensing ability, and an accompanied resistive switch is also observed. It is considered that the electron transfer between OH−(H2O)4 and ZnO NWs will forms a hydroxyl‐like intermediate state (OH*) on the top of Zn2+, leading to the band bending of ZnO and activating the reactive O2− ions on the oxygen vacancies. The active‐ion‐gated strategy proposed here present a novel exploration to achieving RT gas sensing performance of MOS by activating sensing properties at the scale of ions or atoms.

In situ assembly of one-dimensional Pt@ZnO nanofibers driven by a ZIF-8 framework for achieving a high-performance acetone sensor

“…In fact, the existence of Pt NPs has an effect on the catalytic activity and causes lattice distortion of ZnO particles in the crystal growth stage, which inhibits grain boundary migration and increases the energy barrier of grain growth. [31][32][33] Meanwhile, noble metals have been shown to effectively prevent SMO particle grain growth, 34 resulting in the further reduction of the diameter (255 nm) of Pt@ZnO NFs (Fig. 2f, Fig.…”

Effect of laminate structure on morphology and ethanol sensing properties of hierarchical zinc–cobalt layered double hydroxides

“…4 WO 3 , In 2 O 3 and Co 3 O 4 have also been shown to be highly reactive and sensitive to organic compound changes in air. [5][6][7] Generally, semiconductor sensors work at relatively high operating temperatures to show good sensitivity. However, working at high temperatures increases energy consumption and limits the use of sensors in special environments such as those containing flammable and explosive substances.…”

Designing advanced S‐scheme CdS QDs/La‐Bi2WO6 photocatalysts for efficient degradation of RhB

“…Photocatalysis technology has the advantages of low cost, a friendly environment, and a wide application range and is considered an excellent method to solve environmental problems. [16] Many scholars have conducted corresponding studies on TiO 2 , [17][18][19] ZnO, [20][21][22][23] BiOX (X = I, Cl, Br), [24][25][26] and Bi 2 WO 6 , [27,28] which have been widely used in the field of global environment governance. Notably, Bi 2 WO 6 , a simple class of N type semiconductor materials in the Aurivillius family, with a well-visible response and suitable band gap (≈2.7 eV).…”