Active Fault Protection for High Power IGBTs

Chen, Lihua; Peng, Fang Zheng

doi:10.1109/apec.2009.4802956

Cited by 13 publications

(4 citation statements)

References 14 publications

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“…Advanced gate drive circuits [13,14] that allow reduction of the dI/dt during turnoff under short circuit conditions have been developed using the principle of varying the gate resistance after detection of the fault. During a load short circuit, the IGBT collector current can rise to several times its steady state value.…”

Section: Discussionmentioning

confidence: 99%

Gate Drive Circuit Design

Baliga

2015

The IGBT Device

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Section: Discussionmentioning

confidence: 99%

Gate Drive Circuit Design

Baliga

2015

The IGBT Device

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“…Thus, short-circuit detection is typically implemented through the gate driver hardware circuits for rapid protection, rather than reply on online diagnostic algorithms. The most well-known SC diagnostic method is desaturation detection in which the on-state voltage of the switching device will be detected by a sensing diode and compared to a predetermined value [7][36] [37]. To avoid false diagnosis of the SC fault and trigger the protection, this solution requires a programmed delay, the so-called blanking time, of around 1-5…”

Section: B Diagnosis Of Sc Switching Faultmentioning

confidence: 99%

On-line fault diagnosis and fault-tolerant operation of modular multilevel converters — A comprehensive review

Yang

Wang

2020

Trans. Electr. Mach. Syst.

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“…[7] proposed a novel switching control method for di/dt on and du/dt off. [8]- [9] both proposed a closed-loop control method based on parasitic inductance voltage to measure switching elements.…”

Section: Introductionmentioning

confidence: 99%

Variable Gate Resistance Drive Circuit Based on di/dt Feedback for IGBT

Wang

Liu

et al. 2023

J. Phys.: Conf. Ser.

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To overcome the rigid control of the classical drive method which used fixed resistance to drive IGBT, a variable gate resistance drive method was proposed. This method detected the change rate of collector current through the parasitic inductor of the IGBT module, and the closed-loop feedback was used to control this rate of change. All the expressions between voltage overshoot , overcurrent and di/dt were derived. Based on these expressions, the di/dt feedback control was designed. The feedback circuit selected gate resistances with different resistance values to drive IGBT in various stages of the turn-on and off process. According to the simulation analysis, both switching time and loss were reduced ultimately. The current peak and overvoltage were controlled effectively, and the switching performance was improved.

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Active Fault Protection for High Power IGBTs

Cited by 13 publications

References 14 publications

Gate Drive Circuit Design

Gate Drive Circuit Design

On-line fault diagnosis and fault-tolerant operation of modular multilevel converters — A comprehensive review

Variable Gate Resistance Drive Circuit Based on di/dt Feedback for IGBT

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