Active closed‐loop gate voltage control method to mitigate metal‐oxide semiconductor field‐effect transistor turn‐off voltage overshoot and ring

Wang, Xiaowei; Sun, Yue; Li, Tiecai; Shi, Jian

doi:10.1049/iet-pel.2012.0603

Cited by 14 publications

(7 citation statements)

References 13 publications

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“…The derived equation indicates that due to parasitic inductance and capacitance the drain current undergoes ringing, thereby forcing the drain-source voltage to oscillate [36,37]. Suppression of this obtruded ringing in the switching waveform is vital to ensure low distortion and stunted electromagnetic noise [38]. Here, the objective is to dampen the ringing in the drain-source voltage of the low-side MOSFET S L during turn-off by employing an RC snubber across the S L as shown in Figure 7a.…”

Section: Rc Snubber For Suppression Of Parasitic Ringingmentioning

confidence: 99%

Suppression of Switching Crosstalk and Voltage Oscillations in a SiC MOSFET Based Half-Bridge Converter

Zaman

Zheng

et al. 2018

Energies

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The silicon carbide (SiC) MOSFET is characterized by high operating voltage, temperature, switching frequency and efficiency which enables a converter to achieve high power density. However, at high switching frequency, the crosstalk phenomenon occurs when the gate voltage spike introduced by high dv/dt and voltage ringing forces false turn-on of SiC MOSFET which causes a crow-bar current thereby increasing switching losses. In order to increase the immunity against the crosstalk phenomenon in a half-bridge configuration, this paper presents a gate driver for SiC MOSFET capable of generating the negative turn-off voltage without using a negative power supply. In addition, the effect of parasitic inductances on the switching response is analyzed and an RC snubber is designed using high-frequency based circuit reduction technique to dampen the switching ringing. The performance of the proposed gate driver and the designed RC snubber is validated using simulation and experiment at the 1 MHz switching frequency. The results show that the proposed gate driver with RC snubber eliminates crosstalk by maintaining any spurious gate spike below the gate threshold voltage.

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Section: Rc Snubber For Suppression Of Parasitic Ringingmentioning

confidence: 99%

Suppression of Switching Crosstalk and Voltage Oscillations in a SiC MOSFET Based Half-Bridge Converter

Zaman

Zheng

et al. 2018

Energies

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“…It has been presented that the conducted and radiated emissions in switching power converters have the common sources consisted of the voltage and current switching waveforms of power MOSFET/IGBT [6]. Therefore, the EMI mitigation approaches can be achieved by regulating the profiles of those waveforms via the converter's own auxiliary circuits, such as the appropriate design of circuit layout [7,8], soft-switch transition approaches [9][10][11], and novel switchcontrol schemes [12,13].…”

Section: Introductionmentioning

confidence: 99%

EMI mitigation in switching power converters combining closed‐loop gate drive and chaotic frequency modulation technique

Cui

et al. 2019

IET Power Electronics

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All switching power converters are characterised by inevitable switching actions with relevant interference emissions. The voltage and current transients of power metal oxide semiconductor field effect transistor (MOSFET)/insulated-gate bipolar transistor are the main sources in switching power converters for both conducted and radiated emissions. In this study, a promising electromagnetic interference (EMI) mitigation method combining the closed-loop gate drive method and the chaotic switching frequency modulation technique is demonstrated for switching power converters. A chaotic pulse-width modulation waveform with Gaussian S-shape switching transients was proposed to achieve remarkable reduced EMI generation at all frequencies. Spectral characteristics of this new switching waveform were investigated by the power spectral density to verify the feasibility of reduced EMI generation. A closed-loop gate controller was presented to shape the switching transients of power MOSFET into the proposed switching waveform. Circuit tests were carried out in both simulations and experiments. The results validated that the proposed method could achieve remarkable EMI mitigation in switching power converters.

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“…In addition to controlling the drive resistance and drive current, the switching transition can also be controlled by controlling the gate voltage [21][22][23][24][25][26][27][28][29] . The influence of the gate voltage on the drain voltage spike and oscillation is deduced theoretically in [23], but the corresponding solution are not given.…”

Section: Introductionmentioning

confidence: 99%

A new active gate driver for MOSFET to suppress turn-off spike and oscillation

Jiang

Feng

Yang

et al. 2018

Chin. J. Electr. Eng.

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MOSFETs are widely used in power electronics converters. Due to the high di/dt and dv/dt of the MOSFET and parasitic parameters in the circuit, drain voltage spikes and oscillations will be generated during turn-off, which can affect the safety of the device and degrade the system's electromagnetic compatibility. This paper first studies the relationship between drain voltage spike and gate voltage during turn-off. Based on the effect of gate voltage on drain voltage spike, a new active gate driver that optimizes gate voltage is proposed. The proposed active gate driver detects the slope of the drain voltage and generates a positive pulse in the drain current fall phase to increase the gate voltage, thereby suppressing drain voltage spike and oscillation. In order to verify the effectiveness of the proposed active gate driver, a simulation circuit and an experimental platform are constructed and compared with the conventional gate driver. Simulation and experimental results show that the new active gate driver can effectively suppress the drain voltage spike and oscillation of MOSFETs, and can effectively reduce high-frequency EMI.

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Active closed‐loop gate voltage control method to mitigate metal‐oxide semiconductor field‐effect transistor turn‐off voltage overshoot and ring

Cited by 14 publications

References 13 publications

Suppression of Switching Crosstalk and Voltage Oscillations in a SiC MOSFET Based Half-Bridge Converter

Suppression of Switching Crosstalk and Voltage Oscillations in a SiC MOSFET Based Half-Bridge Converter

EMI mitigation in switching power converters combining closed‐loop gate drive and chaotic frequency modulation technique

A new active gate driver for MOSFET to suppress turn-off spike and oscillation

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