Active Broadband Absorber Based on Phase-Change Materials Optimized via Evolutionary Algorithm
Jing Ma,
Yonghong Tian,
Jingyi Cheng
et al.
Abstract:This article proposes a temperature-controlled absorber based on VO2, which consists of five layers: a disk-shaped VO2 layer array, a dielectric layer, a circular hole VO2 array, a SiO2 layer, and a gold substrate from top to bottom. We optimized the thickness of the other four layers of the absorber, except for the gold layer, using PSO. After ten iterations, we determined that the optimal parameters for the top-to-bottom four-layer thicknesses were 0.183 μm, 0.452 μm, 0.557 μm and 1.994 μm. At this point, ou… Show more
“…Even if it could be manufactured, the cost would be very high -the process tolerance of the device will be discussed later. 50 First we discuss the effect of the thickness of the layer d. See Fig. 4(a), from which it can be observed that the absorption curve is blue-shifted when d is increased from 5 mm to 11 mm.…”
Section: Resultsmentioning
confidence: 99%
“…Even if it could be manufactured, the cost would be very high – the process tolerance of the device will be discussed later. 50 First we discuss the effect of the thickness of the dielectric layer d . See Fig.…”
The terahertz perfect absorber can be applied in the field of control, sensing and modulation of optical fields in micro- and nanostructures. However, it has a single function, complex device...
“…Even if it could be manufactured, the cost would be very high -the process tolerance of the device will be discussed later. 50 First we discuss the effect of the thickness of the layer d. See Fig. 4(a), from which it can be observed that the absorption curve is blue-shifted when d is increased from 5 mm to 11 mm.…”
Section: Resultsmentioning
confidence: 99%
“…Even if it could be manufactured, the cost would be very high – the process tolerance of the device will be discussed later. 50 First we discuss the effect of the thickness of the dielectric layer d . See Fig.…”
The terahertz perfect absorber can be applied in the field of control, sensing and modulation of optical fields in micro- and nanostructures. However, it has a single function, complex device...
“…In practical application, the incident waves may come from different directions and the polarization state is not fixed. 52,53 Therefore, the design of absorptive devices should take into account the influence of polarization and incident angle on the absorption performance. To demonstrate the practicality of our absorption device, we performed a parametric scan simulation for incident angles from 0° to 60° with a step size of 10° under TM and TE modes at T = 342 K to reflect the sensitivity of the device to the incident angle.…”
A mid-infrared broadband thermal tunable absorption device based on phase change material VO2 is proposed. The device can cover the far infrared window, with an average absorption rate higher than 90%, and is polarization independent and insensitive to large incident angle.
“…Recently, some MMs integrated with VO 2 have been proposed to achieve adjustable functions. 14,34–38 For example, Yang et al proposed a switchable quarter-/half-wave plate that can achieve multiple plasmon resonances by adjusting the phase transition of VO 2 . 39 Wang et al theoretically designed an absorber that can be continuously adjusted.…”
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