Abstract:We report the activation of silicon implanted with phosphorus and boron atoms by infrared semiconductor laser annealing using carbon films as an optical absorption layer. 2-mm surface region was heated above 1000 C longer than 22 ms by scanning the laser beam for a dwell time of 40 ms. We carried out implantations of 1 Â 10 15 cm À2 phosphorus atoms at 100, 300, and 500 keV, and boron clusters with a boron concentration of 1 Â 10 15 cm À2 at 6 keV. Laser irradiation at 375 kW/cm 2 was conducted to activate imp… Show more
“…6(a,b), which attributing to suitable grain sizes and boundaries increase influence with heavy B doping 30,31 . After checking the carrier concentration data, one can find at least 900 °C-annealing is necessary for activation the implanted B ions 29,32 for heavily doped samples of more than 10 15 cm −2 dosage, furthermore annealing of more than 1000 °C, even if only for 15 seconds, can activate most of implanted B atoms, and even at the temperature of 1150 °C, almost all the implanted B atoms are activated which leading the measured Hall carrier concentration value is larger than the designed value 1.8 × 10 20 cm −3 .Figure 6Hall measurement results (mobility, carrier concentration, and conductivity) of ( a ) Si 1-x-y Ge x Sn y and ( b ) Si 0.889 Ge 0.111 samples after 15 seconds-RTA as a function of the RTA temperature.…”
The interest in thermoelectrics (TE) for an electrical output power by converting any kind of heat has flourished in recent years, but questions about the efficiency at the ambient temperature and safety remain unanswered. With the possibility of integration in the technology of semiconductors based on silicon, highly harvested power density, abundant on earth, nontoxicity, and cost-efficiency, Si1-x-yGexSny ternary alloy film has been investigated to highlight its efficiency through ion implantation and high-temperature rapid thermal annealing (RTA) process. Significant improvement of the ambient-temperature TE performance has been achieved in a boron-implanted Si0.864Ge0.108Sn0.028 thin film after a short time RTA process at 1100 °C for 15 seconds, the power factor achieves to 11.3 μWcm−1 K−2 at room temperature. The introduction of Sn into Si1-xGex dose not only significantly improve the conductivity of Si1-xGex thermoelectric materials but also achieves a relatively high Seebeck coefficient at room temperature. This work manifests emerging opportunities for modulation Si integration thermoelectrics as wearable devices charger by body temperature.
“…6(a,b), which attributing to suitable grain sizes and boundaries increase influence with heavy B doping 30,31 . After checking the carrier concentration data, one can find at least 900 °C-annealing is necessary for activation the implanted B ions 29,32 for heavily doped samples of more than 10 15 cm −2 dosage, furthermore annealing of more than 1000 °C, even if only for 15 seconds, can activate most of implanted B atoms, and even at the temperature of 1150 °C, almost all the implanted B atoms are activated which leading the measured Hall carrier concentration value is larger than the designed value 1.8 × 10 20 cm −3 .Figure 6Hall measurement results (mobility, carrier concentration, and conductivity) of ( a ) Si 1-x-y Ge x Sn y and ( b ) Si 0.889 Ge 0.111 samples after 15 seconds-RTA as a function of the RTA temperature.…”
The interest in thermoelectrics (TE) for an electrical output power by converting any kind of heat has flourished in recent years, but questions about the efficiency at the ambient temperature and safety remain unanswered. With the possibility of integration in the technology of semiconductors based on silicon, highly harvested power density, abundant on earth, nontoxicity, and cost-efficiency, Si1-x-yGexSny ternary alloy film has been investigated to highlight its efficiency through ion implantation and high-temperature rapid thermal annealing (RTA) process. Significant improvement of the ambient-temperature TE performance has been achieved in a boron-implanted Si0.864Ge0.108Sn0.028 thin film after a short time RTA process at 1100 °C for 15 seconds, the power factor achieves to 11.3 μWcm−1 K−2 at room temperature. The introduction of Sn into Si1-xGex dose not only significantly improve the conductivity of Si1-xGex thermoelectric materials but also achieves a relatively high Seebeck coefficient at room temperature. This work manifests emerging opportunities for modulation Si integration thermoelectrics as wearable devices charger by body temperature.
“…A numerical calculation program of optical reflectivity spectra was developed to analyze experimental reflectivity spectra and A eff . 27,34,[41][42][43] The sample structure shown in Fig. 1 was set for calculation.…”
Reduction of optical reflection loss is discussed in three mechanical stacked samples: top crystalline silicon and bottom crystalline germanium substrates, top crystalline GaAs and bottom crystalline silicon substrates, and top crystalline GaP and bottom crystalline silicon substrates using an epoxy-type adhesive with a reflective index of 1.47. Transparent conductive Indium gallium zinc oxide (IGZO) layers with a refractive index of 1.85 were used as antireflection layers. IGZO layers were formed on the bottom surface of the top substrate and the top surface of the bottom substrate of the three stacked samples with thicknesses of 188, 130, and 102 nm. The insertion of IGZO layers decreased the optical reflectivity of the stacked samples. The IGZO layers provided high effective optical absorbency of bottom substrates of 0.925, 0.943, and 0.931, respectively, for light wavelength regions for light in which the top substrates were transparent and the bottom substrates were opaque.
“…The sheet resistance and minority carrier effective lifetime eff was investigated by the 9.35 GHz microwave transmittance measurement system in the dark field and 635 nm continuous light illumination at 1.5 mW/cm 2 to the top surface [2]. Optical reflectivity spectra were also measured and analyzed to estimate the crystalline volume ratio [3]. Thermally grown SiO 2 layers were subsequently removed by hydrofluoric acid.…”
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