Activation of Al2O3 surface passivation of silicon: Separating bulk and surface effects

Grant, N.E.; Pain, S.L.; Khorani, E.; Jefferies, R.; Wratten, A.; McNab, S.; Walker, D.; Han, Y.; Beanland, R.; Bonilla, R.S.; Murphy, J.D.

doi:10.1016/j.apsusc.2023.158786

Cited by 8 publications

(3 citation statements)

References 40 publications

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“…Corona charging having minimal impact on effective lifetime, has been attributed to charge leakage. 6,7,19,44 As such, we speculate that the lack of improvement in O 3 –HfO x lifetime could be attributed to this, noting we did not characterise charge leakage in this study.…”

Section: Resultsmentioning

confidence: 89%

“…, ∼−10 11 q cm −2 previously reported for H 2 O–HfO x grown with this precursor, 11 and ∼−10 12 to −10 13 q cm −2 for the more conventional Al 2 O 3 ). 7,15,16 The trends observed with H 2 O–HfO x differ from HfO x grown with other co-reactants. As shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

“…5 ALD-grown films are usually annealed ex situ to “activate” the passivation, with the passivation level strongly affected by the post-deposition annealing temperature due to variations in chemical and field effects. 6,7…”

Section: Introductionmentioning

confidence: 99%

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Influence of co-reactants on surface passivation by nanoscale hafnium oxide layers grown by atomic layer deposition on silicon

Pain,

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Yadav

et al. 2024

RSC Appl. Interfaces

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Section: Resultsmentioning

confidence: 89%

Section: Resultsmentioning

confidence: 99%

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Influence of co-reactants on surface passivation by nanoscale hafnium oxide layers grown by atomic layer deposition on silicon

Pain,

Khorani,

Yadav

et al. 2024

RSC Appl. Interfaces

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Enhancement of Near‐Infrared Photovoltaic Response of Si/Au Schottky‐Junction Structure by Band‐Bending Approaches

Yang,

Dai,

Shen

et al. 2024

Physica Status Solidi (a)

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A combined approach of band bending is employed to enhance the near‐infrared (NIR) photovoltaic (PV) response of a Si/Au Schottky junction (SHJ) device. As a reference, the basic architecture of the SHJ device consists of textured n‐Si and gold nanoparticles (Au NPs). Its photoelectric conversion efficiency at 1319 nm wavelength is 0.0302%. A series of band‐bending approaches are then applied to the reference device in sequence, aiming to minimize the electric loss of the structure by strengthening built‐in electric field. These approaches include introductions of an Al2O3 layer for front field passivation, a p+‐Si layer to form a p+n‐like junction at the front of the device and a SiO2 layer for rear field passivation. With these modifications, under 1319 nm illumination, the open‐circuit voltage eventually increases by 14%, the short‐circuit current increases by 18% and the photoelectric conversion efficiency of the device increases by 66% to reach 0.0501%. The results of this work propose a strategy to minimize the electric loss in an NIR PV device.

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Atomic Layer Deposition of Hafnium Oxide Passivating Layers on Silicon: Impact of Precursor Selection

Pain,

Yadav,

Walker

et al. 2024

Physica Rapid Research Ltrs

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Hafnium oxide (HfOx) films grown by atomic layer deposition (ALD) have recently been demonstrated to provide high‐quality silicon surface passivation. Reports have suggested that changing the composition of the hafnium‐containing precursor can enable films of both charge polarities to be produced. Herein, the passivation quality of hafnium oxide grown with metal amide precursors and a tetrakis(ethylmethylamido)hafnium (TEMAHf) precursor is examined, considering film charge polarity, chemical‐ and field‐based passivation effects, and film crystallinity. Throughout, the properties of TEMAHf‐HfOx are benchmarked against that of hafnium oxide grown with a tetrakis(dimethylamido)hafnium precursor. It is found that precursor choice has no influence on the fixed negative charge polarity (of order −1012 q cm−2) of HfOx films grown via plasma‐enhanced ALD. TEMAHf‐HfOx passivation is influenced by post‐deposition annealing temperature and can passivate with a surface recombination velocity ≤3 cm s−1 on n‐type silicon, compared to surface recombination velocities ≤11 cm s−1 for TDMAHf‐HfOx of a similar thickness.

show abstract

Activation of Al2O3 surface passivation of silicon: Separating bulk and surface effects

Cited by 8 publications

References 40 publications

Influence of co-reactants on surface passivation by nanoscale hafnium oxide layers grown by atomic layer deposition on silicon

Influence of co-reactants on surface passivation by nanoscale hafnium oxide layers grown by atomic layer deposition on silicon

Enhancement of Near‐Infrared Photovoltaic Response of Si/Au Schottky‐Junction Structure by Band‐Bending Approaches

Atomic Layer Deposition of Hafnium Oxide Passivating Layers on Silicon: Impact of Precursor Selection

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