Activating Mobile Dislocation in Boron Carbide at Room Temperature via Al Doping

Search for the Charmed Baryonium and Dibaryon Structures via the QCD Sum Rules

“…We can write Eq. ( 31) at the hadron level as (19)(20)(21), with respect to Borel mass T , when J 1/2,−, 3F ,1,1,ρ is adopted. In the middle panel the short-dashed, solid, and long-dashed curves are obtained by fixing ω ′ c = 1.47 GeV, 1.57 GeV, and 1.67 GeV, respectively.…”

“…Furthermore, various research collaborations have determined the spin-parity quantum numbers of the lowest-lying orbitally excited charmed baryons, namely, Λ c (2595) [14], Λ c (2625) [15], Ξ c (2790) [16], and Ξ c (2815) [17]. Subsequently, several newly discovered excited charmed baryons, such as Λ c (2765) [18], Λ c (2860) [19], Λ c (2880) [18], Λ c (2910) [20], Λ c (2940) [19], Ξ c (2980) [21], Ξ c (3055) [22], Ξ c (3080) [23], Ξ c (3123) [22] and others, arising from both B-decay and e + e − → cc scattering processes, have been observed by the BaBar, Belle, and LHCb Collaborations. We extract some experimental measurements as follows:…”

“…• In 2022 the Belle Collaboration discovered a new structure in the Σ c (2455) 0,++ π ± spectrum with a significance of 4.2σ [20]. This state is tentatively named Λ c (2910) + .…”

“…FIG.2: Variations of CVG (left), PC ′ (middle), and PC (right), as defined in Eqs (19)(20)(21),. with respect to Borel mass T , when J 1/2,−, 3F ,1,1,ρ is adopted.…”

Introducing dislocations in ceramics by mechanical rolling: A first demonstration using SrTiO3 crystal

“…For instance, the bi-crystal interface bonding 16,17 method requires strict control of the fabrication parameters, such as the temperature, pressure, and impurities of the crystals, thus the dislocation structure introduced only exists at the interface of the two crystals. Processing techniques such as flash sintering, 18,19 atomic doping, 20,21 and high-entropy alloying 22 can produce bulk materials with dislocations, but they all face problems in controlling the structure and density of the introduced dislocations. Although the ion beam irradiation technique has been reported to induce dislocation loops in ceramics such as CeO 2 , 12 microstructures such as point defects, defect clusters, and voids are normally introduced into the materials simultaneously.…”