1996
DOI: 10.2320/jinstmet1952.60.6_582
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Activated Slip Systems in β-Silicon Nitride during High Temperature Deformation

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“…In general, such contrasts have been observed typically in β-Si 3 N 4 single crystals plastically deformed at high temperatures in the previous studies. 16,18,20 Therefore, it is most likely that the formation of the strain contrasts is due to the plastic deformation, though the specimens were deformed at room temperature.…”
Section: Yield Phenomenamentioning
confidence: 99%
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“…In general, such contrasts have been observed typically in β-Si 3 N 4 single crystals plastically deformed at high temperatures in the previous studies. 16,18,20 Therefore, it is most likely that the formation of the strain contrasts is due to the plastic deformation, though the specimens were deformed at room temperature.…”
Section: Yield Phenomenamentioning
confidence: 99%
“…14 Transmission electron microscopy (TEM) investigations have been conducted on plastic deformation and dislocation behaviors of β-Si 3 N 4 single crystals, revealing that dislocations having 〈0 0 0 1〉 Burgers vector is most frequently identified and the primary slip plane is {10 10}. [15][16][17][18][19][20] More recently, it was reported that β-Si 3 N 4 single crystals undergo plastic deformation when the compressive stress exceeds the yield stress due to the generation and movement of dislocations in the primary slip system {1010} ⟨0001⟩ by means of micropillar compression tests. 21 However, when materials are used for structural applications, their fractures generally occur not in compression but in tension.…”
Section: Introductionmentioning
confidence: 99%
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