Acoustoelectronic Rayleigh Wave Devices

Stern, E.

doi:10.1007/978-3-642-82621-4_16

Cited by 9 publications

(2 citation statements)

References 27 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The magnitude of AE interaction expected (figure S4) by assuming a K 2 of 0.9% is 16 dB cm −1 , which is significantly larger than the measured value. The discrepancy is expected to be due to a large fraction of AW induced displacement charge being com pensated by traps and localized interface charge sites, rather than the semiconductor space charge [36,37].…”

Section: Ae Attenuation On Lnos-cmentioning

confidence: 99%

Silicon acoustoelectronics with thin film lithium niobate

Bhaskar¹,

Bhave²,

Weinstein³

2018

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

We report on the acoustoelectric (AE) interaction in heterogeneously integrated thinfilm lithium niobate on standard resistivity and high resistivity silicon substrates (LNOSs). The monolithic LNOS platform delivers acoustic waves with a large electromechanical coupling coefficient (K 2 ) and draws on standard metaloxide semiconductor field effect techniques to maximise AE interaction by impedance matching the acoustic wave with the semiconductor carriers. Preliminary results are obtained on AE attenuation (4 dB cm −1 ) and AE gain (6 dB cm −1 ). With further improvement of the LN/Si interface, the LNOS platform can be expected to give rise to an era of nonreciprocal silicon acoustoelectronics.

show abstract

Section: Ae Attenuation On Lnos-cmentioning

confidence: 99%

Silicon acoustoelectronics with thin film lithium niobate

Bhaskar¹,

Bhave²,

Weinstein³

2018

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

show abstract

“…Acoustic waves in contrast, travel roughly five orders of magnitude more slowly than EM waves, thus enabling lithographic definition of wavelength-scale features and significant time delays at RF frequencies of interest. As a result, acoustic waves in piezoelectric solids have been widely utilized in the implementation of delay lines [5,6], transversal filters [7,8], correlators [9][10][11], convolvers [12], and other analog signal processing devices [13]. While acoustic propagation losses are typically lower than in EM counterparts, devices requiring large time-bandwidth products (TBP) can still undergo signal degradation due to significant time delays.…”

Section: Introductionmentioning

confidence: 99%

Acoustic wave amplification with thin film silicon bonded on lithium niobate

Ghosh¹

2022

J. Micromech. Microeng.

View full text Add to dashboard Cite

Signal processing with the use of acoustic waves is an important technology for various functions in RF systems, including matched filtering in congested parts of the frequency spectrum. In order to generate long time delays on chip required for these applications, the acoustoelectric effect offers the ability to counter acoustic propagation losses while also generating inherent non-reciprocity. In this work, we demonstrate an approach to directly bond thin film silicon from 200-mm commercial SOI wafers on X-cut lithium niobate substrates with the use of plasma surface activation. The resulting delay line devices at 410 MHz demonstrate amplification of Rayleigh waves, with a peak non-reciprocal contrast between forward and reverse traveling waves of over 25 dB/mm under continuous DC bias conditions. The demonstrated process can extend the functionality of traditionally passive piezoelectric RF microsystems.

show abstract