Acoustoelectronic interaction in Te and CdS at high magnetic fields

Stepurenko, A. A.; Aliev, K. M.; Abakarova, N. S.

doi:10.1002/pssa.2211270218

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“…The samples studied here were ~0.5 cm in size. The nonequilibrium EHP and longitudinal ASs were created by Joule heating of the samples on application of a quasi dc electric field [16].…”

Section: Autosolitons In Low Resistivity Indium Antimonide and Telluriummentioning

confidence: 99%

Autosolitons in low-resistivity indium antimonide and tellurium single crystals in a magnetic field

2012

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A number of nonlinear charge carrier transport phenomena in semiconductors in a high electric field are controlled by the fundamental properties of semi conductors. One such nonlinear phenomena is the acoustoelectric effect: due to acoustoelectronic (AE) interaction in piezoelectric semiconductors, the gen eration and amplification of acoustic vibrations is induced in electric fields, in which the drift velocity of charge carriers v dr is comparable with or higher than the phase velocity of the acoustic wave v ph (v dr ≥ v ph ). As a result, the current-voltage characteristic involves a portion of saturation or a bend, and the time behav ior of the current exhibits acoustoelectric oscillations [1][2][3]. Another nonlinear phenomenon is the Gann effect which manifests itself as high frequency oscilla tions by the Ridley-Watkins-Hilsum mechanism in multivalley semiconductors [4][5][6]. One of the inter esting and beautiful phenomena of nonlinear physics is the formation of autosolitons (AS), i.e., time inde pendent solitary states in certain semiconductor sys tems. Specifically, upon excitation of a nonlinear dynamic system, such as a nonequilibrium electronhole plasma (EHP) (created by one of the listed meth ods: photoexcitation, application of a high electric field, injection, generation of Gann domains, dissoci ation of excitons, Joule heating), a dissipative struc ture is formed. In such systems, there typically exist stable and highly nonequilibrium solitary regions with the extremum concentration and temperature of charge carriers; these regions are referred to as ASs [7]. In a loose EHP in an electric field, transverse ASs are formed. These ASs are localized regions with a reduced concentration and elevated temperature of charge carriers (hot ASs) [8]. In an asymmetric plasma (μ e ӷ μ 0 ) in an electric field, transverse ASs move as high field domains [9]. In a dense EHP (μ ∝ n -1 , j = σE ∝ T 3/2 E), longitudinal ASs are formed; a longitu dinal AS is a current pinch with a highly nonuniform transverse distribution of the concentration and tem perature of charge carriers [10,11]. Experimental studies of the behavior of transverse and longitudinal ASs in p InSb with the concentration of charge carri ers p ≈ 10 12 cm -3 in a magnetic field showed the pro found effect of both transverse and longitudinal mag netic fields. It was experimentally shown [12] that a comparatively low longitudinal magnetic field induced a substantial change in the velocity of trans verse ASs in InSb samples. In that case, the frequency and amplitude of current oscillations in the external circuit increased or decreased, depending on the direction of the longitudinal magnetic field. In [13], it was shown that a low longitudinal magnetic field induced abrupt current jumps as a result of division of the longitudinal AS. After application of a magnetic field, the initial AS current takes another stable value. The initial state is recovered by application of an oppositely directed magnetic field. The threshold characteristics for the forma...

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“…The samples studied here were ~0.5 cm in size. The nonequilibrium EHP and longitudinal ASs were created by Joule heating of the samples on application of a quasi dc electric field [16].…”

Section: Autosolitons In Low Resistivity Indium Antimonide and Telluriummentioning

confidence: 99%