Acoustoelectric transient spectroscopy of microwave treated GaAs-based structures

Olikh, O. Ya.

doi:10.15407/spqeo6.04.450

Semicond. Phys. Quantum Electron. Optoelectron.

2003

DOI: 10.15407/spqeo6.04.450

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Acoustoelectric transient spectroscopy of microwave treated GaAs-based structures

O. Ya. Olikh¹

Abstract: The effects of microwave (2.45 GHz) treatment influence on the cross section for electron capture and the energy of the deep levels in the forbidden gap of GaAs monocrystals and n-n + epitaxial structures have been investigated using acoustoelectric transient spectroscopy.

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Acoustoelectric transient spectroscopy of microwave treated GaAs-based structures

Abstract: The effects of microwave (2.45 GHz) treatment influence on the cross section for electron capture and the energy of the deep levels in the forbidden gap of GaAs monocrystals and n-n + epitaxial structures have been investigated using acoustoelectric transient spectroscopy.

Cited by 0 publications

References 8 publications

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