Acoustoelectric luminescence from a field-effect n-i-p lateral junction

Simoni, Giorgio De; Piazza, Vincenzo; Sorba, L.; Biasiol, G.; Beltram, Fabio

doi:10.1063/1.3106108

Cited by 16 publications

(9 citation statements)

References 14 publications

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“…Furthermore, lateral 2-D p-n junctions are potential candidates for investigating the properties of electron spins in low-dimensional systems by optical methods [7]. On the other hand, there has been an increasing interest in the surface acoustic wave (SAW)-driven single-photon sources owing to their potential applications in high-speed quantum communications [8][9][10]. In [8], Foden et al proposed that when a SAW propagates through a two-dimensional (2D) p-i-n junction, a series of traveling quantum dots are formed in the i-region of the junction.…”

Section: Introductionmentioning

confidence: 99%

High-quality planar light emitting diode formed by induced two-dimensional electron and hole gases

Dai¹,

Lin²,

Lin³

et al. 2014

Opt. Express

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A high-quality planar two-dimensional p-i-n light emitting diode in an entirely undoped GaAs/AlGaAs quantum well has been fabricated by using conventional lithography process. With twin gate design, two-dimensional electron and hold gases can be placed closely on demand. The electroluminescence of the device exhibit high stability and clear transition peaks so it is promising for applications on electrically-driven single photon sources.

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Section: Introductionmentioning

confidence: 99%

High-quality planar light emitting diode formed by induced two-dimensional electron and hole gases

Dai¹,

Lin²,

Lin³

et al. 2014

Opt. Express

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show abstract

“…To generate light, single electrons must be carried in SAW potential minima across a lateral n-i-p junction to create single photons by recombining with holes (see Supplementary Video for a simple animation). Over more than a decade, various attempts have been made to implement this scheme [37][38][39][40][41][42]. However, to the authors' knowledge, no evidence for photon antibunching or single-photon emission has been observed.…”

mentioning

confidence: 96%

Single-photon emission from single-electron transport in a SAW-driven lateral light-emitting diode

et al. 2020

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Single-photon sources are essential building blocks in quantum photonic networks, where quantum-mechanical properties of photons are utilised to achieve quantum technologies such as quantum cryptography and quantum computing. Most conventional solid-state single-photon sources are based on single emitters such as self-assembled quantum dots, which are created at random locations and require spectral filtering. These issues hinder the integration of a singlephoton source into a scaleable photonic quantum network for applications such as on-chip photonic quantum processors. In this work, using only regular lithography techniques on a conventional GaAs quantum well, we realise an electrically triggered single-photon source with a GHz repetition rate and without the need for spectral filtering. In this device, a single electron is carried in the potential minimum of a surface acoustic wave (SAW) and is transported to a region of holes to form an exciton. The exciton then decays and creates a single photon in a lifetime of ∼ 100 ps. This SAW-driven electroluminescence (EL) yields photon antibunching with g (2) (0) = 0.39 ± 0.05, which satisfies the common criterion for a single-photon source g (2) (0) < 0.5. Furthermore, we estimate that if a photon detector receives a SAW-driven EL signal within one SAW period, this signal has a 79%-90% chance of being a single photon. This work shows that a single-photon source can be made by combining single-electron transport and a lateral n-i-p junction. This approach makes it possible to create multiple synchronised single-photon sources at chosen positions with photon energy determined by quantum-well thickness. Compared with conventional quantum-dot-based single-photon sources, this device may be more suitable for an on-chip integrated photonic quantum network.The development of single-photon sources is important for many quantum information technologies [1][2][3], such as quantum cryptography [4][5][6], quantum communication [7][8][9], quantum metrology [10, 11], and quantum computation [12, 13]. Currently, most high-performance single-photon sources are self-assembled InGaAs-based quantum dots (QDs) [14][15][16]. However, there are several issues that may limit their integration into practical quantum photonic networks [17][18][19][20][21][22][23][24]. Firstly, in conventional growth of self-assembled QDs, the location and size of each QD are quite random. Therefore, one has to rely on statistics to create structures like optical cavities and gates around a quantum dot. This will be an issue for applications that require several deterministicallyfabricated single-photon sources on a compact chip. Secondly, it is hard to precisely control the size of a quantum dot, which will affect the single-photon energy. Hence, it is challenging to make identical QD single-photon sources, which is essential for applications like quantum computation and a quantum repeater [12,25]. Finally, in order to ensure that a neutral exciton is created in every optical or electrical excitation, the e...

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“…This processing technique was also very time-consuming and so it may be more satisfactory to induce both electrons and holes in an undoped wafer. Such a lateral p-n junction was fabricated in Pisa a few years later: De Simoni et al showed that they could use a SAW to pump a stream of electrons into the sea of holes, and they observed a corresponding flux of photons as electrons and holes recombined [93]. In Cambridge, induced samples have now shown quantised current when pumping with a SAW from one region of electrons to another [94], but so far no quantisation when pumping from electrons to holes.…”

Section: Non-adiabatic Excitation In Moving Dotsmentioning

confidence: 99%