Acoustoelectric effect in graphene with degenerate energy dispersion

Abstract

The acoustoelectric effect AE in Graphene with degenerate energy dispersion is theoretically studied for hypersound in the regime ql >> 1. At low temperatures (k β T << 1), the non-linear dependence of Acoustoelectric current j/j 0 on the frequency ω q and temperature T are numerically analysed. The obtained graph for j/j 0 against ω q qualitatively agreed with an experimentally obtained results. For j/j 0 versus T , the dependence of Acoustoelectric current in Graphene was found to manifest at low temperatures.

Absorption of Acoustic Phonons in Fluorinated Carbon Nanotubes with Non-Parabolic, Double Periodic Band

“…al [9] treated theoretically hypersound amplification but Dompreh et.al. [10] further proved that absorption also occurs in the material. Experimentally, Miseikis et.…”

Thermoelectric amplification of phonons in graphene

“…al. [11] further showed that even at V D = 0, absorption of acoustic phonons can occur. Acoustoelectric Effect (AE) involves the transfer of momentum from phonons to conducting charge carriers which leads to the generation of d.c. current in the sample.…”

“…Acoustoelectric Effect (AE) involves the transfer of momentum from phonons to conducting charge carriers which leads to the generation of d.c. current in the sample. This has been studied both theoretically [10,11] and experimentally [12] in Graphene.…”

Amplification of acoustic waves in armchair graphene nanoribbon in the presence of external electric and magnetic fields

“…In low-dimensional systems, the acoustic wave amplification (absorption) was studied theoretically and experimentally [24,25,26,27,28]. Recently the study of acoustic effect in semiconductor nanostructure materials is extended to Carbon Nanotube (CNT) [29,30,31,32] and Graphene with few experimental work carried out [33,34,35,36]. These carbon based materials have interesting properties as well as an excellent combination of electronic, optoelectronic, and thermal properties compared to conventional rigid silicon which makes them excellent systems for application in electronic and optoelectronic systems.…”