Acoustoelectric convolvers for programmable matched filtering in spread-spectrum systems

Cafarella, J.H.; Brown, W. Norman; Stern, E.; Alusow, J.A.

doi:10.1109/proc.1976.10206

Cited by 35 publications

(4 citation statements)

References 5 publications

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“…Figu re 11 (b) outl i nes a th ree-port SAW convolver employing acoustoelectric interactions with an epitaxial silicon layer separated by an air gap of -""2000 A [45], [209]. This design is attractive for very wide-band radar applications.…”

Section: Three-port Acoustoelectric Sa W Convolvermentioning

confidence: 99%

Applications of surface acoustic and shallow bulk acoustic wave devices

Campbell

1989

Proc. IEEE

111

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Applications of surface acoustic wave (SA W) and shallow bulk acoustic wave (SBA W) devices are reviewed. SA W-device coverage includes delay lines and filters operating at selected frequencies in the range from about 10 MHz to 11 GHz, modeling with singlecrystal piezoelectrics and layered structures, resonators and lowloss filters, comb filters and multiplexers, antenna duplexers, harmonic devices, chirp filters for pulse compression, coding with fixed and programmable transversal filters, Barker and quadraphase coding, adaptive filters, acoustic and acoustoelectric convolvers and correia tors for radar, spread spectrum, and packet radio, acoustooptic processors for Bragg modulation and spectrum analysis, real-time Fourier-transform, and cepstrum processors for radar and sonar, compressive receivers, Nyquist filters for microwave digital radio, clock-recovery filters for optical fiber communications, fixed-, tunable-, and multimode-oscillators, and frequency synthesizers, acoustic charge transport (ACT), and other SA W devices for signal processing on gallium arsenide, SA W sensors, and scanning acoustic microscopy. SBA W-devices applications include gigahertz delay lines, surface transverse wave resonators employing energy-trapping gratings, as well as oscillators with enhanced performance and capability.

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Section: Three-port Acoustoelectric Sa W Convolvermentioning

confidence: 99%

Applications of surface acoustic and shallow bulk acoustic wave devices

Campbell

1989

Proc. IEEE

111

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“…Acoustic waves in contrast, travel roughly five orders of magnitude more slowly than EM waves, thus enabling lithographic definition of wavelength-scale features and significant time delays at RF frequencies of interest. As a result, acoustic waves in piezoelectric solids have been widely utilized in the implementation of delay lines [5,6], transversal filters [7,8], correlators [9][10][11], convolvers [12], and other analog signal processing devices [13]. While acoustic propagation losses are typically lower than in EM counterparts, devices requiring large time-bandwidth products (TBP) can still undergo signal degradation due to significant time delays.…”

Section: Introductionmentioning

confidence: 99%

Acoustic wave amplification with thin film silicon bonded on lithium niobate

Ghosh¹

2022

J. Micromech. Microeng.

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Signal processing with the use of acoustic waves is an important technology for various functions in RF systems, including matched filtering in congested parts of the frequency spectrum. In order to generate long time delays on chip required for these applications, the acoustoelectric effect offers the ability to counter acoustic propagation losses while also generating inherent non-reciprocity. In this work, we demonstrate an approach to directly bond thin film silicon from 200-mm commercial SOI wafers on X-cut lithium niobate substrates with the use of plasma surface activation. The resulting delay line devices at 410 MHz demonstrate amplification of Rayleigh waves, with a peak non-reciprocal contrast between forward and reverse traveling waves of over 25 dB/mm under continuous DC bias conditions. The demonstrated process can extend the functionality of traditionally passive piezoelectric RF microsystems.

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“…For clarity, the curves with drift fields of (1.6,1.2,0.8,0.4,0.0) kV/cm are respectively displaced vertically by (20,15,10,5,0). frequency acoustic amplifiers [32][33][34], convolvers [35,36], and correlators [37][38][39]. Recent advances in semiconductor epitaxy, heterogeneous integration, and nanofabrication have led to a new class of acoustoelectric heterostructures, enabling ultra-compact acoustic amplifiers [40][41][42][43][44], circulators [41,45], and switches [46], with performance that greatly supercedes that which was previously possible.…”

Section: Introductionmentioning

confidence: 99%

Modulation of Brillouin optomechanical interactions via acoustoelectric phonon-electron coupling

Otterstrom¹,

Storey²,

Behunin³

et al. 2021

Preprint

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Optomechanical Brillouin nonlinearities-arising from the coupling between traveling photons and phonons-have become the basis for a range of powerful optical signal processing and sensing technologies. The dynamics of such interactions are largely set and limited by the host material's elastic, optical, and photo-elastic properties, which are generally considered intrinsic and static.Here we show for the first time that it is feasible to dynamically reconfigure the Brillouin nonlinear susceptibility in transparent semiconductors through acoustoelectric phonon-electron coupling. Acoustoelectric interactions permit a wide range of tunability of the phonon dissipation rate and velocity, perhaps the most influential parameters in the Brillouin nonlinear susceptibility. We develop a Hamiltonian-based analysis that yields self-consistent dynamical equations and noise coupling, allowing us to explore the physics of such acoustoelectrically enhanced Brillouin (AEB) interactions and show that they give rise to a dramatic enhancement of the performance of Brillouin-based photonic technologies. Moreover, we show that these AEB effects can drive systems into new regimes of fully-coherent scattering that resemble the dynamics of optical parametric processes, dramatically different than the incoherent traditional Brillouin limit. We propose and computationally explore a particular semiconductor heterostructure in which the acoustoelectric interaction arises from a piezoelectric phonon-electron coupling. We find that this system provides the necessary piezoelectric and carrier response (k 2 ≈ 6%), favorable semiconductor materials properties, and large optomechanical confinement and coupling (|g0| ≈ 8000 (rad/s) √ m) sufficient to demonstrate these new AEB enhanced optomechanical interactions.

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Acoustoelectric convolvers for programmable matched filtering in spread-spectrum systems

Cited by 35 publications

References 5 publications

Applications of surface acoustic and shallow bulk acoustic wave devices

Applications of surface acoustic and shallow bulk acoustic wave devices

Acoustic wave amplification with thin film silicon bonded on lithium niobate

Modulation of Brillouin optomechanical interactions via acoustoelectric phonon-electron coupling

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