“…In the literature, various methods have been proposed for beam shaping and homogenization: intensity modification of Gaussian laser beams by phase filtering or diffraction gratings (Veldkamp 1981, Katti and Mehta 1976, Lee 1981) acousto-optical effects (Ohtsuka and Tanone 1981), aspherical lenses (Shafer 1982), particular absorption elements (Penzkofer andFrohlich 1979, Greenaway andSteinle 1979), beam splitting/ superimposing techniques (Pera et al 1985, Latta and Jain 1984, Jain and Latta 1985, Pressley 1984, Kawamura et a1 1983 and others. However, serious drawbacks prevent these methods from being applied for semiconductor treatment: an exact flat-top intensity profile possessing sharp edges cannot be generated; the residual deviation of the actual profile from the ideal form is not acceptable, 0 the optical-geometrical parameters of the resulting profile (flatness, cross section, position on the target) remain sensitive to the parameters of the incoming beam in a certain degree, such as position, aperture, divergence, intensity distribution.…”